Specification
Manufacturer: ZEISS
Technical specifications:
Scanning electron microscope ZEISS Ultra55 |
---|
Technical data: - EDS, WDS, EBSD, STEM
- Resolution: 0.8 nm
- Acceleration voltage: 300 V to 30 kV in 10 V steps
- Magnification: 15x to 1.000.000x
- Beam current: 1 pA to 20 nA, electronic optibeam, Gemini
- Detectors:
- Each 2 x secondary electron detector, backscattered electron detector, in-lens
- SDD detector for EDS, 10 mm2 active area, energy resolution < 129 eV, for Mn-Kα radiation, detection from boron (OZ 5)
- WDS system TEXS, 5 crystals, X-ray capillary system
- EBSD system OIM XM4, DigiViewIV CCD camera
|
Typical applications: - Analysis of inclusions, precipitates and microstructures (fracture surfaces), phases and subphases, grain boundaries and subgrain boundaries with regard to structural features and chemical composition
|
Contact:
Dr.-Ing. Armin Franke
Leipziger Straße 34 (Ledebur-Bau), Room 212
+49 3731 39-2413
Armin [dot] Franke [at] iest [dot] tu-freiberg [dot] de (E-Mail)