manufacturer: Bruker AXS GmbH, Karlsruhe (Germany)

technical specifications:

• X-ray diffractometer with parallel beam optics (θ–2θ)
• anode material: Cu
• angular range: 2θ = 0° ... 155°
• parabolic Ni/C multilayer mirror in the incident beam (AXO Dresden GmbH)
• sample stages:
  • standard sample stage for powder and compact, bulk samples
  • reflectometry sample stage with knife edge, e.g. for wafers
• parallel plate collimator in the diffracted beam (acceptance: 0.12° or 0.23°)
• LiF monochromator (reduces Kα₂/Kα₁ ratio)
• Li-drifted Si solid state scintillation counter (0D detector)

typical applications:

• X-ray diffraction with fixed, small angle of incidence (asymmetric diffraction, GAXRD) for the analysis of thin films:
  • qualitative/quantitative phase analysis
  • determination of lattice parameters
  • analysis of residual stresses of the I. kind (sin²ψ method)
• X-ray reflectometry:
  • measurement of surface roughness
  • investigation of multilayer structures
  • determination of thin film thicknesses (e.g. oxide layers)