manufacturer: JEOL Ltd.

technical specifications:

• field emission scanning electron microscope (up to 30 keV) results in high resolution with a high beam current
• lateral resolution > 1 nm (SE)
• up to 500 nA beam current for fast analytical methods
• secondary electron detector for imaging of surface morphologies
• back-scattered electron detector (BSD) to image contrasts based on (average) atomic number and/or crystal orientation
• in column secondary electron detector with energy filtering
• crystal defect imaging using ECCI (BSD) 
• local chemical analytics for elements heavier than carbon using EDX (Octane - EDAX)
• local crystal orientation analysis using EBSD (Hikari - EDAX)

typical applications:

• imaging of the microstructure of materials on a micrometer scale
• identification of inclusions, precipitates and contaminations
• local chemical analysis
• local phase analysis
• analysis of crystal orientation distribution and texture