Neue Publikation in Journal of Applied Physics: S. Shams, I. Ratschinski, D. Hiller, „Atomic layer deposition of HfO2 as a charge-lean capping layer material for SiO2-modulation acceptor doping of silicon“, J. Appl. Phys. 137, 064301 (2025), https://doi.org/10.1063/5.0256687