• Lehninger, D.; Honeit, F.; Rafaja, D.; Klemm, V.; Röder, Ch.; Khomenkova, L.; Schneider, F.; von Borany, J.; Heitmann, J.: "Size- and position-controlled Ge nanocrystals separated by high-k dielectrics" MRS Bulletin, May 2022, DOI:10.1557/s43577-022-00311-8.
• Mtchedlidze, T.; Schmid, A.; Heitmann, J.: "Characterization of ultrathin FDSOI stacks using low field mobility" physica status solidi a (applications and material science), May 2022, DOI:10.1002/pssa.202200133.

• Min, B.; Müller, M.; Wolpensinger, B.; Fischer, G.; Palinginis, P.; Neuhaus, D. H.; Brendel, R.: "Impact of Local Back-Surface-Field Thickness Variation on Performance of PERC Solar Cells" IEEE J. Photovolt., Volume 11(4), p. 908–913, 2021, DOI:10.1109/JPHOTOV.2021.3068603
• Wehmeier, N.; Fischer, G.; Herlufsen, S.; Wolny, F.; Wagner, M.; Bothe, K.; Müller, M.: "Kinetics of the Light and Elevated Temperature Induced Degradation and Regeneration of Quasi-Monocrystalline Silicon Solar Cells" IEEE J. Photovolt., Volume 11(4), p. 890–896, 2021, DOI:10.1109/JPHOTOV.2021.3066239
• Schwanke, S.; Trempa, M.; Schuck, K.; Kranert, C.; Müller, M.; Reimann, C.; Kuczynski, M.; Schroll, G.; Sans, J.; Stenzenberger, J.; Hesse, K.; Heitmann, J.; Friedrich, J.: "Numerical forecast of redzone extension in cast silicon ingots in dependence on the purity level of crucible, coating and feedstock" J. Cryst. Growth, Volume 574, p. 126304, 2021, DOI:10.1016/j.jcrysgro.2021.126304
• Sabater, A. A.; Fell, A.; Brand, A. A.; Müller, M.; Greulich, J. M.: "Parameterization of the Back-Surface Reflection for PERC Solar Cells Including Variation of Back-Contact Coverage" IEEE J. Photovolt., Volume 11(5), pp. 1136–1140, Sept. 2021, DOI:10.1109/JPHOTOV.2021.3082402
• Fischer, G.; Mohnsen, H.-W.; Heitmann, J.; Müller, M.: „A Gaussian Process Regression Metamodel for Pattern Recognition in Current-Voltage Parameters of PERC Solar Cells“ 1st Virtual European Advanced Process Control and Manufacturing (apc|m) conference, 2021
• Fischer, G.; Klose, K.; Kleint, T.; Stöcker, H.; Beyer, J.; Heitmann, J.; Müller, M.: „Synthesis and Defect Characterization of 2D Hybrid-Perovskites“ Proc. 38th EU PVSEC, pp. 430–432, 2021. ISBN: 3-936338-78-7. DOI:10.4229/EUPVSEC20212021-3BV.1.11
• Zimmermann, F.; Beyer, J.; Röder, Ch.; Beyer, F. C.; Richter, E.; Irmscher, K.; Heitmann, J.: "Current Status of Carbon-Related Defect Luminescence in GaN" physica status solidi a, August 2021, DOI;10.1002/pssa.202100235.
• Zimmermann, F.; Beyer, J.; Beyer, F. C.; Gärtner, G.; Gamov, I.; Irmscher, K.; Richter, E.; Weyers, M.; Heitman, J.: "A carbon-doping related luminescence band in GaN revealed by below bandgap excitation" Journal of Applied Physics, Volume 130, Issue 5, 055703, July 2021; DOI:10.1063/5.0053940
• Fuchs, M. C.; Beyer, J.; Lorenz, S.; Sharma S.; Renno, A. D.; Heitmann, J.; Gloaguen, R.: "A spectral library for laser-induced fluorescence analysis as a tool for rare earth element identification " Earth System Science Data, DOI:10.5194/essd-2020-296.
• Graf, L.; Ortstein, K.; Doctor, L. P.; Naumann, M.; Beyer, J.; Heitmann, J.; Leo, K.; Knupfer, M.: "New charge-transfer states in blends of ZnPC with F8ZnPC" AIP Advances, Volume 11, Issue 2, February 2021, DOI:10.1063/5.0037958.
• Seidel, S.; Schmid, A.; Miersch, Ch.; Schubert, J.; Heitmann, J.: "AlGaN/GaN MISHEMTs with epitaxially grown GdScO₃ as high-κ dielectric", Applied Physical Letters, Volume 118, Issue 5, January 2021, DOI:10.1063/5.0037692.

2020 

• Müller, M.; Wolpensinger, B.; Min, B.; Fischer, G.; Palinginis, P.; Neuhaus, D. H.: "Impact of Local Back-Surface-Field Thickness on Open-Circuit Voltage in PERC Solar Cells: An Experimental Study Applying ANOVA to Determine Critical Sample Size Necessary to Differentiate Mean LBSF Values With Statistical Significance" IEEE Journal of Photovoltaics, Volume 10, Number 6, pp. 1642-1647, November 2020, DOI:10.1109/JPHOTOV.2020.3026978.
• Müller, M.; Weber, A.; Kropp, A.I.; Ehrl, M.; Urban, T.; Häussermann, P.; Neubert, B.; Albrecht, A.; Seidel, S.; Otto, R.; Dadzis, K.; Menzel, R.; Trempa, M.; Kranert, C.; Reimann, C.; Heitmann, J.: "Methodology to Determine Bulk Crystal Quality in Terms of Carrier Lifetime without Wafering" 37th European Photovoltaic Solar Energy Conference and Exhibition, pp. 449-451, September 2020, ISBN:3-936338-73-6, DOI:10.4229/EUPVSEC20202020-2DV.2.10.
• Fischer, G.; Wolny, F.; Neuhaus, H., Müller, M.: "Aspects of Gallium Doping for PERC Solar Cells" 37th European Photovoltaic Solar Energy Conference and Exhibition, pp. 238-241, September 2020, ISBN:3-936338-73-6, DOI:10.4229/EUPVSEC20202020-2CO.13.2.
• Fischer, G.; Beyer, J.; Müller, L.; Jarosz, A.; Heitmann, J.; Müller, M.: "Synthesis of Mixed-Halide Hybrid Perovskites for Defect Characterization" 37th European Photovoltaic Solar Energy Conference and Exhibition, pp. 678-681, September 2020, ISBN:3-936338-73-6, DOI:10.4229/EUPVSEC20202020-3BV.1.32.
• Lange, S.; Hensel, S.; Hähnel, A.; Naumann, V.; Urban, T.; Müller, M.; Hagendorf, C.: "Contact and Bulk Resistivity Screening for Advanced Crystalline Silicon Solar Cell Concepts by an Economical and Reliable Transfer Length Measurement Method Based on Laser Micro‐Patterning" Phys. Status Solidi A, Volume 218, Issue 2, November 2020, DOI:10.1002/pssa.202000520.
• Dadzis, K.; Menzel, R.; Juda, U.; Irmscher, K.; Kranert, C.; Müller, M.; Ehrl, M.; Weingärtner, R.; Reimann, C.; Abrosimov, N.; Riemann, H.: "Characterization of Silicon Crystals Grown from Melt in a Granulate Crucible" Topical Collection: 18th Conference on Defects (DRIP XVIII), Journal of Electronic Materials, Volume 49, pages 5120–5132, July 2020, DOI:10.1007/s11664-020-08309-1, open access.
• Sharma, S. K.; Behm, Th.; Köhler, Th.; Beyer, J.; Gloaguen, R.; Heitmann, J.: "Library of UV-Visible Absorption Spectra of Rare Earth Orthophosphates, LnPO₄ (Ln = La-Lu, except Pm)", MDPI crystals, Volume 10, Number 7, July 2020, DOI:10.3390/cryst10070593, open access.
• Khomenkova, L.; Lehninger, D.; Agocs, E.; Petrik, P.; Portier, X.; Korsunska, N.; Melnichuk, O.; Gourbilleau, F.; Heitmann J.: "Whether Ge-Rich ZrO₂ and Ge-Rich HfO₂ Materials Have Similar Reaction on Annealing Treatment?", ECS Transactions, Volume 97, Number 1, April 2020. DOI:10.1149/09701.0049ecst.
• Sharma, S. K.; Beyer, J.; Gloaguen, R.; Heitmann, J.: "Comparing the optical properties and thermal stability of green (TbPO₄), yellow (DyPO₄), and red (PrPO₄) emitting single crystal samples" Phys. Chem. Chem. Phys., April 2020. DOI:10.1039/D0CP01561J.

2019 

• Urban, T.; Heitmann, J.; Müller, M.: Numerical Simulations for In‐Depth Analysis of Transmission Line Method Measurements for Photovoltaic Applications—The Influence of the p–n Junction, Physica Status Solidi A, 20219. DOI: 10.1002/pssa.201900600.
• Fischer, G.; Dastgheib-Shirazi, A.; Terheiden, B.; Müller, M.: A novel approach for the evaluation of a phosphorus diffusion design of experiment, AIP Conference Proceedings, Volume 2147, Issue 1, Page 070003, 2019. DOI: 10.1063/1.5123864.
• Tratnikov, M.; Müller, M.: Excess charge carrier injection densities in PERC solar cells at open-circuit voltage and maximum power point, AIP Conference Proceedings, Volume 2147, Issue 1, Page 020018, 2019. DOI: 10.1063/1.5123823.
• Urban, T.; Mette, A.; Müller, M.; Heimann, J.: Front and Rear Pressure Contact Degradation in Solar Modules Due to Thermal Cycle Treatment, IEEE Journal of Photovoltaics, Volume 9, Issue 5, Page 1360-1365, 2019. DOI: 10.1109/JPHOTOV.2019.2925551.
• Richter, E.; Beyer, C. F.; Zimmermann, F.; Gärtner, G.; Irmscher, K.; Gamov, I.; Heitmann, J.; Weyers, M.; Tränkle, G.: Growth and Properties of Intentionally Carbon‐Doped GaN Layers Crystal Research&Technology, 2019, DOI:10.1002/crat.201900129.
• Sharma, S. K.; Beyer, J.; Gloaguen R.; Heitmann, J.: Non-quenching photoluminescence emission up to at least 865 K upon near-UV excitation in a single crystal of orange-red emitting SmPO₄ Phys. Chem. Chem. Phys., Volume 21, 25669-25677, 2019, DOI: 10.1039/C9CP05663G.
• Lukin, G.; Schneider, T.; Förste, M.; Barchuk, M.; Schimpf, C.; Röder, C.; Zimmermann, F.; Niederschlag, E.; Pätzold, O.; Beyer F. C.; Rafaja, D.; Stelter, M.: "Heteroepitaxial growth of GaN on sapphire substrates by high temperature vapor phase epitaxy" Journal of Crystal Growth, Volume 524, 125185, 2019, DOI: 10.1016/j.jcrysgro.2019.125185.
• Sharma, S. K.; Köhler, Th.; Beyer, J.; Fuchs, M.; Gloaguen, R.; Heitmann, J.: "Extending the temperature sensing range using Eu³⁺ luminescence up to 865 K in a single crystal of EuPO₄" Phys. Chem. Chem. Phys., Volume 21, 16329-16336, 2019, DOI: 10.1039/C9CP03501J.
• Beyer, J.; Schüler, N.; Erlekamp, J.; Kallinger, B.; Berwian, P.; Dornich, K.; Heitmann, J.: "Minority Carrier Lifetime Measurements on 4H-SiC Epiwafers by Time-Resolved Photoluminescence and Microwave Detected Photoconductivity" Materials Science Forum, Volume 963, 313-317, 2019, DOI:10.4028/www.scientific.net/MSF.963.313.
• Sharma, S. K.; Bettinelli, M.; Carrasco I.; Beyer J.; Gloaguen, R.; Heitmann, J.: "Dynamics of Charges in Superlong Blacklight-Emitting CaB₂O₄:Ce³⁺ Persistent Phosphor" J. Phys. Chem. C, 2019, 123, 23, 14639-14646, DOI:10.1021/acs.jpcc.9b02210.
• Seidel, P.; Lorenz, S.; Heinig, Th.; Zimmermann, R.; Booysen, R.; Beyer, J.; Heitmann, J.; Gloaguen, R.: "Fast 2D Laser-Induced Fluorescence Spectroscopy Mapping of Rare Earth Elements in Rock Samples" Sensors, Volume 19, Issue 10, 2019, DOI:10.3390/s19102219.
• Wolny, F.; Krause, A.; Müller, M.; Fischer, G.; Neuhaus, H.: "Reduced metal contamination from crucible and coating using a silicon nitride based diffusion barrier for the growth of cast quasi-single crystalline silicon ingots", Journal of Crystal Growth, Volume 514, 2019, DOI:10.1016/j.jcrysgro.2019.02.055.
• Lorenz, S.; Beyer, J.; Fuchs, M.; Seidel, P.; Turner, D.; Heitmann, J.; Gloaguen, R.: "The Potential of Reflectance and Laser Induced Luminescence Spectroscopy for Near-Field Rare Earth Element Detection in Mineral Exploration", Remote Sensing, Volume 11, Issue 1, 2019. DOI:10.3390/rs11010021.

2018 

• Zimmermann, F.; Gärtner, G.; Sträter, H.; Röder, C.; Barchuk, M.; Bastin, D.; Hofmann, P.; Krupinski, M.; Mikolajick, T.; Heitmann J.; Beyer, F.C.: "Green coloring of GaN single crystals introduced by Cr impurity", Journal of Luminescence, Volume 207, 507-511, March 2019. DOI:10.1016/j.jlumin.2018.11.044.
• Müller, M.; Wagner, M.; Krause, A.; Neuhaus, D.H.: "Quantitative local efficiency loss analysis on cast-mono PERC solar cells using the DLIT ‘local I-V’ method", AIP Conference Proceedings, 1999, 020020, August 2018. DOI:10.1063/1.5049259.
• Müller, M.; Ehrl, M.; Heitmann, J.: "Energy yield considerations based on the BO-related defect", AIP Conference Proceedings, 1999, 090002, August 2018. DOI:10.1063/1.5049259.
• Nekarda, J.-F.; Brand, A.; Linse, M.; Clement, F.; Schneider, J.; Turek, M.; Großer, S.; Schoenfelder, S.; Urban. T.; Ehrl. M.; Müller. M.; Heitmann, J.; Yüce. C.; Willenbacher, N.; Große, T.; Böhme, R.; König, M.; Frintrup, H.; Fuss-Kailuweit, P.; Kersten, F.; Mette, A.; Müller, J.W.; Preu, R.: "Results of the Project 'AdmMo' - Cell and Module Development towards a 318 W Module", EUPVSEC Proceedings, 2018, ISBN:3-936338-50-7. DOI:10.4229/35thEUPVSEC20182018-2DV.3.66.
• Müller, M.; Wolny, F.; Fischer, G.; Krause, A.; Palinginis, P.; Neuhaus, D.H.: "Change of the Bulk Carrier Lifetime of High Quality Silicon Wafers during PERC Solar Cell Processing", EUPVSEC Proceedings, 2018. ISBN:3-936338-50-7. DOI:10.4229/35thEUPVSEC20182018-2BO.3.3.
• Lehninger, D.; Beyer, J.; Heitmann, J.: "A Review on Ge Nanocrystals Embedded in SiO₂ and High-k Dielectrics", physica status solidi (a), 2018. DOI:10.1002/pssa.201701028.
• Seidel, S.; Rebohle, L.; Prucnal, S.; Lehninger, D.; Hübner, R.; Klemm, V.; Skorupa, W.; Heitmann, J.: "Microstructure and charge trapping in ZrO₂- and Si₃N₄-based superlattice layer systems with Ge nanoparticles", Thin Solid Films, 645, 124-128, 2018. DOI:10.1016/j.tsf.2017.10.029.
• Fell, A.; Schön, J.; Müller, M.; Wöhrle, N.; Schubert, M. C.; Glunz S. W.: "Modeling Edge Recombination in Silicon Solar Cells", IEEE Journal of Photovoltaics, Volume: 8, Issue: 2, March 2018. DOI:10.1109/JPHOTOV.2017.2787020.

2017 

• Urban, T.; Turek, M.; Großer, S.; Hagendorf, C.; Heitmann, J.: "Reliability Investigation of the Rear Side Metallization of PERC Cells", 33rd European Photovoltaic Solar Energy Conference and Exhibition, 1705-1708 (2017). DOI: 10.4229/EUPVSEC20172017-5BV.4.71
• Urban, T.; Krügel, K.; Heitmann, J.: "Formation of AgAl Alloy in Context of PERC Solar Cell Metallization", Energy Procedia, 124, 930-935 (2017). DOI: 10.1016/j.egypro.2017.09.271.
• Min, B.; Wagner, H.; Müller, M.; Fischer, G.; Brendel, R.; Altermatt, P. P.; Neuhaus, H.: "A roadmap towards 24 % efficient PERC solar cells in industrial mass production", IEEE Journal of Photovoltaics, 7, 1541–1550 (2017). DOI:10.1109/JPHOTOV.2017.2749007.
• Lukin, G.; Schneider, T.; Barchuk, M.; Zimmermann, F.; Niederschlag, E.; Pätzold, O.; Stelter, M.: "Modiefied high temperature vapor phase epitaxy for growth of GaN films", Physica Status Solidi A, 1600753 (2017). DOI: 10.1002/pssa.201600753.
• Schneider, T.; Lukin, G.; Zimmermann, F.; Barchuk, M.; Niederschlag, E.; Pätzold, O.; Stelter, M.: "Studies on High Temperature Vapor Phase Eoitaxy of GaN", Journal of Crytsal Growth, 468,212 (2017). DOI:10.1016/j.jcrysgro.2016.10.080.
• Zimmermann, F.; Beyer, F. C.; Gärtner, G.; Röder, C.; Son, N. T.; Janzén, E.; Veselá, D.; Lorincik, J.; Hofmann, P.; Krupinski, M.; Mikolajick, T.; Habel, F.; Leibiger, G.; Heitmann, J.: "Origin of orange color in nominally undoped HVPE GaN crystals", Optical Materials, 70, 127 (2017). DOI:10.1016/j.optmat.2017.05.020.
• Fell, A.; Sträter, H.; Müller, M.; Steinkemper, H.; Schön, J.; Hermle, M.; Schubert, M. C.; Neuhaus, D. H.; Glunz, S. W.: "Modeling of edge recombination losses in half-cells", in Proc. 33rd EU PVSEC, Amsterdam, Netherlands (2017).
• Min, B.; Kruse, C.; Schinke, C.; Wolf, M.; Müller, M.; Sträter, H.; Wagner, M.; Bothe, K.; Brendel, R.: "Identifying the location of recombination from voltage-dependent quantum efficiency measurements", Energy Procedia, 124, 120–125 (2017). DOI:10.1016/j.egypro.2017.09.324.
• Min, B.; Krügener, J.; Müller, M.; Bothe, K.; Brendel, R.: "Fundamental consideration of junction formation strategies for phosphorus-doped emitters with J_0e < 10 fA/cm²", Energy Procedia, 124, 126–130 (2017). DOI: 10.1016/j.egypro.2017.09.323.
• Wolny, F.; Müller, M.; Krause, A.; Neuhaus, D. H.: "Study of the bulk lifetime and material saturation current density of different p-type monocrystalline silicon materials", Energy Procedia, 124, 235–239 (2017). DOI:10.1016/j.egypro.2017.09.264.
• Müller, M.; Fischer, G.; Bitnar, B.; Steckemetz, S.; Schiepe, R.; Mühlbauer, M.; Köhler, R; Richter, P.; Kusterer, C.; Oehlke, A.; Schneiderlöchner, E.; Sträter, H.; Wolny, F.; Wagner, M.; Palinginis, P.; Neuhaus, D. H.: "Loss analysis of 22% efficient industrial PERC solar cells", Energy Procedia, 124, 131–137 (2017). DOI:10.1016/j.egypro.2017.09.322.
• Lehninger, D.; Rafaja, D.; Wünsche, J.; Schneider, F.; von Borany, J. and Heitmann, J.: "Formation of orthorhombic (Zr, Ta)O₂ in thin Zr-Ta-O films", Applied Physics Letters, 110, 262903 (2017). DOI: 10.1063/1.4990529.
• Agocs, E.; Zolnai, Z.; Rossall, A. K.; van den Berg, J. A.; Fodor, B.; Lehninger, D.; Khomenkova, L.; Ponomaryov, S.; Gudymenko, O.; Yukhymchuk, V.; Kalas, B.; Heitmann, J.; Petrik, P.: "Optical and structural characterization of Ge clusters embedded in ZrO₂", Applied Surface Science, 421, 283-288 (2017). DOI: 10.1016/j.apsusc.2017.03.153.
• Urban, T.; Krügel, K.; Heitmann, J.: "Formation of AgAl Alloy in Context of PERC Solar Cell Metallization.", Poster, SiliconPV - 7th International Conference on Crystalline Silicon Photovoltaics, Freiburg, Germany 2017, Energy Procedia (submitted).
• Kersten, F.; Fertig, F.; Petter, K.; Klöter, B.; Herzog, E.; Strobel, M.; Heitmann, J.; Müller, J. W.: "System performance loss due to LeTID", Präsentation, SiliconPV - 7th International Conference on Crystalline Silicon Photovoltaics, Freiburg, Germany 2017, Energy Procedia (submitted).
• Lantzsch, R.; Mohr, A.; Schaper, M.; Bartzsch, M.; Wissen, D.; Mette, A.; Peters, S.; Eidner, A.; Kersten, F.; Schütze, M.; Cieslak, J.; Duncker, K.; Junghänel, M.; Jarzembowski, E.; Kauert, M.; Geißler, S.; Hörnlein, S.; Klenke, C.; Niebergall, L.; Schönmann, A.; Weihrauch, A.; Hofmann, A.; Rudolph, T.; Schwabedissen, A.; Gundermann, M.; Müller, J. W.; Jeong, D.J.W.: "Mass Production of p-type Cz Silicon Solar Cells Approaching Avg. Stable Conversion Efficiencies of 22%", Präsentation, SiliconPV - 7th International Conference on Crystalline Silicon Photovoltaics, Freiburg, Germany 2017, Energy Procedia (submitted).
• Khomenkova, L.; Lehninger, D.; Kondratenko, O.; Ponomaryov, S.; Gudymenko, O.; Tsybrii, Z.; Yukhymchuk, V.; Kladko, V.; von Borany, J.; Heitmann, J.: "Effect of Ge Content on the Formation of Ge Nanoclusters in Magnetron-Sputtered GeZrO_x-Based Structures.", Nanoscale Research Letters, 12, 196 (2017). DOI: 10.1186/s11671-017-1690-9.
• Hofmann, R.; Schreiter, M.; Heitmann; J.: "The concept of thin bulk acoustic resonators as selective CO₂ gas sensors.", Journal of Sensor and Sensor Systems, 6, 87-96 (2017). DOI: 10.5194/jsss-6-87-2017.
• Wysokowski, M.; Motylenko, M.; Rafaja, D.; Koltsov, I.; Stöcker, H.; Szalaty T. J.; Bazhenov V. V.; Stelling A. L.; Beyer, J.; Heitmann, J.; Jesionowski, T.; Petovic, S.; Đurović, M.; Ehrlich, H.: "Extreme biomimetic approach for synthesis of nanocrystalline chitin-(Ti,Zr)O2 multiphase composites.", Materials Chemistry and Physics, 188, 115-124 (2017). DOI: 10.1016/j.matchemphys.2016.12.038.
• Barchuk, M.; Lukin, G.; Zimmermann, F.; Röder, C.; Motylenko, M.; Pätzold, O.; Heitmann, J.; Kortus, J.; Rafaja, D.: "Effect of Ammonia Flow on the Formation of Microstructure Defects in GaN Layers Grown by High-Temperature Vapor Phase Epitaxy.", Journal of Electronic Materials, 46, 1612 (2017). DOI: 10.1007/s11664-016-5204-z.

2016 

• Petrik, P.; Sulyok, A.; Novotny, T.; Perez-Feró, E.; Kalas, B.; Agocs, E.; Lohner, T.; Lehninger, D.; Khomenkova, L.; Nagy, R.; Heitmann, J.; Menyhard, M.; Hózer, Z.: "Optical properties of Zr and ZrO2.", Applied Surface Science (2016). DOI: 10.1016/j.apsusc.2016.11.072.
• Sohrmann, C.; Scharf, P.; Holland, S.: "Modelling current filamentation during ESD events.", Präsentation: MOS-AK, Dresden, Germany 2016.
• Petter, K.; Hübner, K., Kersten, F.; Bartzsch, M.; Fertig, F.; Müller, J. W.: "Dependence of LeTID on brick height for different wafer suppliers with several resistivities and dopants.", Präsentation: 9th International Workshop on Crystalline Silicon Solar Cells & 3rd Silicon Materials Workshop, Tempe, Arizona 2016.
• Fertig, F.; Kersten, F.; Petter, K.; Bartzsch, M.; Stenzel, F.; Mette, A.; Klöter, B.; Müller, J. W.: "Light and Elevated Temperature Induced Degradation of Multicrystalline Silicon Solar Cells and Modules.", Präsentation: 26th NREL Workshop on Crystalline Silicon Solar Cells & Modules, Vail, Colorado 2016.
• Szabó, N.; Wachowiak, A.; Winzer, A.; Ocker, J.: Gärtner, J.; Hentschel, R.; Schmid, A.; Mikolajick, T.: "High-k/GaN interface engineering toward AlGaN/GaN MIS-HEMT with improved V_th stability.", Journal of Vacuum Science and Technology B, 35, 01A102 (2016), DOI:10.1116/1.4967307.
• Kersten, F.; Heitmann, J.; Müller J. W.: "Impact of Al₂O₃ and SiN_x passivation layers on LeTID.", Präsentation: 32nd European Photovoltaic Solar Energy Conference and Exhibition, Munich, Germany 2016.
• Kersten, F.; Förster, I.; Peters, S.: "Evaluation of spatial ALD of Al2O3 for rear surface passivation of mc-Si PERC solar cells.", Poster: 32nd European Photovoltaic Solar Energy Conference and Exhibition, Munich, Germany 2016.
• Schubert, F.; Wirth, S.; Zimmermann, F.; Heitmann, J.; Mikolajick, T.; Schmult, S.: "Growth condition dependence of unintentional oxygen incorporation in epitaxial GaN.", Science and Technology of Advanced Materials, 17, 239-243 (2016), DOI: 10.1080/14686996.2016.1178565.
• Schicke, K.-D.; Beyer, J.; Hessenkemper, H.; Heitmann, J.: "Optical modifications at the intrinsic absorption treshold in soda lime silicate glass by Ag+-Na+ ion exchange.", Journal of Non-Crystalline Solids, 447, 134-140 (2016), DOI: 10.1016/j.jnoncrysol.2016.06.001.
• Kersten, F.; Engelhart, P.; Ploigt, H.-C.; Stenzel, F.; Petter, K.; Lindner, T.; Szpeth, A.; Bartzsch, M.; Stekolnikov, A.; Scherff, M.; Müller, J. W.; Heitmann, J.: "Degradation of mc-Si Solar Cells & Modules with Dielectric Rear Side Passivation." Präsentation: Novel High-k Applications Workshop, Dresden, Germany 2016.
• Seidel, S.; Sabelfeld, A.; Strohmeyer, R.; Schreiber, G.; Klemm, V.; Rafaja, D.; Joseph, Y.; Heitmann, J.: "Temperature stable Au nanoparticles embedded in Er³⁺ doped ZrO₂ sol-gel thin films prepared by spin coating.", Thin Solid Films, 606, 13-18 (2016), DOI: 10.1016/j.tsf.2016.03.028.
• Kersten, F.; Heitmann, J.; Müller J. W.: "Influence of Al₂O₃ and SiN_x passivation layers on LeTID.", Energy Procedia 92, 828-832 (2016), DOI: 10.1016/j.egypro.2016.07.079.
• Urban, T.; Mette, A.; Heitmann, J.: "Influence of Silver-Aluminium Alloy at Solar Cell Rear Side on Series Resistance and Open Circuit Voltage.", Energy Procedia 92, 236-241 (2016), DOI:10.1016/j.egypro.2016.07.065.
• Heitmann, J.; Schneider, F.; Schmid, A.; Lehninger, D.; Beyer, J.; Hoffmann, R.; Seidel, P.; Kersten, F.: "Glanzlichter der Forschung an der TU Bergakademie Freiberg 250 Jahre nach ihrer Gründung", Nano-crystalline Thin Film Materials for Optical and Electronic Applications, 168–175 (Chemnitz Verlag, 2016), ISBN: 978-3-944509-26-6.
• Hofmann, P.; Röder, C.; Habel, F.; Leibiger, G.; Beyer, F. C.; Gärtner, G.; Eichler, S.; Mikolajick, T.: "Silicon doping of HVPE GaN bulk-crystals avoiding tensile strain generation.", Journal of Physics D: Applied Physics, 49, 075502 (2016). DOI: 10.1088/0022-3727/49/7/075502.

2015

• Wysokowski, M.; Motylenko, M.; Beyer, J.; Makarova, A.; Stöcker, H.; Walter, J.; Galli, R.; Kaiser, S.; Vyalikh, D.; Bazhenov, V. V. et al.: "Extreme biomimetic approach for developing novel chitin-GeO2 nanocomposites with photoluminescent properties.", Nano Research, 8, 2288 (2015). DOI: 10.1007/s12274-015-0739-5.
• Kersten, F.; Engelhart, P.; Ploigt, H.-C.; Stenzel, F.; Petter, K.; Lindner, T.; Szpeth, A.; Bartzsch, M.; Stekolnikov, A.; Scherff, M.; Müller, J. W. ; Heitmann, J.: "Feldrelevante Degradationseffekte von multikristallinen Siliziumsolarzellen & -modulen.", Präsentation: 12. Workshop "Photovoltaik-Modultechnik" TÜV Rheinland, Köln, Germany 2015
• Lehninger, D.; Beyer, J.; Schneider, F.; Pawlik, A.-S.; Heitmann, J.: "Size and Shape Controlled Semiconductor Nanocrystals Synthesized by RF-Sputtering Techniques for Electronic and Optoelectronic Applications.", Plasma Physics, 55, 714-727 (2015). DOI: 10.1002/ctpp.201510017.
• Kersten, F.; Engelhart, P.; Ploigt, H.-C.; Stenzel, F.; Petter, K.; Lindner, T.; Szpeth, A.; Bartzsch, M.; Stekolnikov, A.; Scherff, M.; Heitmann, J.; Müller, J. W.: A new Light Induced Volume Dergradation Effect of mc-Si Solar Cells and Modules., Präsentation: 31st European Photovoltaic Solar Energy Conference and Exhibition, Hamburg, Germany 2015
• Schmid, A.; Otto, R.; Klemm, V.; Rafaja, D.; Winzer, A.; Wachowiak, A.; Heitmann, J.: "Vanadium-based ohmic contacts to AlGaN/GaN MISHEMTs.", Präsentation: EMRS fall meeting, Warsaw, Poland 2015.
• Hofmann, P.; Beyer, F.; Röder, C.; Gärtner, G.; Habel, F.; Leibiger, G.; Weinert, B.; Eichler, S.; Heitmann, J.; Mikolajick, Th.: "Characterization of n-type Si-doped GaN grown by HVPE." Präsentation: EMRS fall meeting, Warsaw, Poland 2015.
• Lehninger, D.; Khomenkova, L.; Röder, C.; Gärtner, G.; Abendroth, B.; Beyer, J.; Schneider, F.; Meyer, D. C.; Heitmann, J.: "Ge nanostructures embedded in ZrO₂-based dielectrics for nonvolatile memory applications.", Präsentation: ECS meeting, Chicago 2015; ECS Trans., 66, 203-212 (2015), DOI: 10.1149/06604.0203ecst
• Kersten, F.>; Engelhart, P.; Ploigt, H.-C.; Stekolnikov, A.; Lindner, Th.; Stenzel, F.; Bartzsch, M.; Szpeth, A.; Petter, K.; Heitmann, J.; Müller, J. W.: "A New mc-Si Degradation Effect called LeTID", Präsentation: 42nd IEEE PVSC New Orleans 2015.
• Lehninger, D.; Schneider, F.; Klemm, V.; Rafaja, D.; Heitmann, J.: "Ge nanostructures embedded in ZrO₂-based dielectrics for electrical applications.", Präsentation: EMRS spring meeting, Lille, France 2015.
• Kersten, F.; Engelhart, P.; Ploigt, H.-C.; Stekolnikov, A.; Lindner, Th.; Stenzel, F.; Bartzsch, M.; Szpeth, A.; Petter, K.; Müller, J. W.; Heitmann, J.: "Degradation of multicrystalline silicon solar cells and modules after illumination at elevated temperature" Präsentation: SiliconPV - 5th International Conference on Crystalline Silicon Photovoltaics, Konstanz, Germany 2015, Solar Energy Materials and Solar Cells, 142, 83-86 (2015), DOI: 10.1016/jsolmat.2015.06.15
• Hoffmann, R.; Beyer, J.; Klemm, V., Rafaja, D.; Johnson, B. C.; McCallum, J. C.; Heitmann, J.: "Erbium-doped slot waveguides containing size-controlled silicon nanocrystals", J. Appl. Phys. 117, 163106 (2015)
• Urban, T.; Heimann, M.; Schmid, A.; Mette, A.; Heitmann, J.: "Analysis of ohmic losses due to solder and pressure interconnection and related interface resistances for solar cells.", Energy Procedia, 77, 420-427 (2015), DOI 10.1016/j.egypro.2015.07.059.
• Zimmermann, F.; Beyer, J.; Lukin, G.; Pätzold, O.; Röder, Ch.; Stelter, M.; Heitmann, J.: "Photoluminescence of GaN grown by high temperature vapor phase epitaxy.", Präsentation: DPG-Tagung Berlin 2015.
• Lehninger, D.; Geyer, M.; Schneider, F.; Klemm, V.; Rafaja, D.; Heitmann, J.: "Crystalisation of Ge-nanoparticles embedded in ZrO₂ based dielectrics for electrical applications.", Präsentation: DPG-Tagung Berlin 2015.
• Hoffmann, R.; Beyer, J.; Klemm, V.; Rafaja, D.; Johnson, B.; Jeffery, C.M.; Heitmann, J.: "Erbium-doped slot waveguides containing Silicon nanocrystals.", Präsentation: DPG-Tagung Berlin 2015.
• Lehninger, D.; Geyer, M.; Schneider, F.; Klemm, V.; Rafaja, D.; Himcinschi, C.; Heitmann, J.: "Charge trapping of Ge-nanoparticles embedded in ZrO₂ based high-K dielectrics." Präsentation: Novel High k Applications Workshop, Dresden, Germany 2015.
• Schubert, F.; Zybell, S.; Heitmann, J.; Mickolajick, Th.; Schmult, S.: "Influence of substrate grade on structural and optical properties of GaN/AlGaN superlattices.", Journal of Crystal Growth 02/2015, DOI:10.1016/j.crysgro.2015.02.037.
• Schmid, A.; Schröter, Ch.; Otto, R.; Schuster, M.; Klemm, V.; Rafaja, D.; Heitmann, J.: "Microstructure of V-based ohmic contacts to AlGaN/GaN heterostructures at a reduced annealing temperature.", Appl. Phys. Lett., 106, 053509 (2015)
• Lehninger, D.; Seidel, P.; Geyer, M.; Schneider, F.; Klemm, V.; Rafaja, D.; von Borany, J.; Heitmann, J.: "Charge trapping of Ge-nanocrystals embedded in TaZrO_x dielectric films.", Appl. Phys. Lett., 106, 023116 (2015)

2014

• Booker, I.D.; Hassan, J.U.; Lilja, L.; Beyer, F. C.; Karhut, R.; Bergmann, J.P.; Danielsson, Ö.; Kordina, O.; Sveinbjörnsson; Janzén, E.: "Carrier Lifetime Controlling Defects Z1/2 and RB1 in Standard and Chlorinated Chemistry Grown 4H-SiC.", Contribution to Crystal Growth and Design: 14: 4104-4110 (2014), DOI: 10.1021/cg5007154
• Winzer, A.; Szabó, N.; Wachowiak, A.; Jordan, P. M.; Heitmann, J.; Mikolajick, Th.: "Impact of postdeposition annealing upon film properties of atomic layer depostion-grown Al₂O₃ on GaN.", J. Vac. Sci. Technol. B, 33, 01A106 (2015)
• Schriever, C.; Bianco, F.; Cazzanelli, M.; Ghulinyan, M.; Eisenschmidt, C.; de Boor, J.; Schmid, A.; Heitmann, J.; Pavesi, L.; Schilling, J.: "Second-Order Nonlinearity in Silicon Waveguides: Inhomogeneous Stress and Interfaces.", Advanced Optical Materials, 2014, DOI: 10.1002/adom.20100370
• Petter, K.; Fahrland, Ch.; Ludwig, Y.; Kersten, F.: "Light Induced Degradation of Solar Cells Made from High Performance Multi Wafers.", Präsentation: 29th European Photovoltaic Solar Energy Conference and Exhibition, Amsterdam, The Netherlands 2014
• Schmid, A.; Kersten, F.; Rentrop, S.; Abendroth, B.; Meyer, D.C.; Heitmann, J.: "Electrical Characterization of Defects in Al₂O₃", Präsentation: ECS 225th Meeting Orlando 2014 and ECS Transactions 61 (2) (2014), 11-20
• Lehninger, D.; Seidel, P.; Schneider, F.; Klemm, V.; Borany, J. von; Heitmann, J.: "Charge Trapping of Ge Nanocrystals Embedded in TaZrO₂", Präsentation: MRS Spring Meeting San Francisco 2014.
• Fahrland, Ch.; Ludwig, Y.; Kersten, F.; Petter, K.: "Sponge LID - A new degradtion mechanism.", Präsentation: 40th IEEE PVSC Denver 2014.
• Krause, A.; Weber, W. A.; Schroeder, U.; Heitmann, J.; Mikolajick, Th.: "Asymmetric oxygen vacancy distribution in CaTiO₃ capacitors.", Poster: DPG-Tagung Dresden 2014.
• Sabelfeld, A.; Seidel, S.; Nestler, T.; Otto, R.; Heitmann, J.; Joseph, Y.: "Embedded Au nanoparticles in ZrO2 thin films for optical and electronical applications.", Poster: DPG-Tagung Dresden 2014
• Geyer, M.; Seidel, P.; Lehninger, D.; Klemm, V.; Schreiber, G.; Heitmann, J.: "Crystallization phenomena of germanium nano crystals in ZrO₂.", Präsentation: DPG-Tagung Dresden 2014
• Lehninger, D.; Seidel, P.; Schneider, F.; Klemm, V.; Borany, J. von; Heitmann, J.: "Nonvolatile memory characteristics of Ge nanocrystals embedded in TaZrO₂.", Präsentation: DPG-Tagung Dresden 2014.
• Pawlik, A.-S.; Beyer, J.; Seidel, P.; Geyer, M.; Heitmann, J.: "Optical characterization of germanium nanostructures.", Präsentation: DPG-Tagung Dresden 2014.
• Schröter, Ch.; Schmid, A.; Klemm, V.; Heitmann, J.: "A comparative study of V/Al/Ni/Au and Ti/Al/Ni/Au ohmic contacts on n-AlGaN/GaN.", Präsentation: DPG-Tagung Dresden 2014
• Zimmermann, F.; Beyer, J.; Habel, F.; Leibiger, G.; Weinert, B.; Krupinski, M.; Hofmann, P.; Heitmann, J.: "Photoluminescence of Zn and Mn doped thick GaN layers.", Präsentation: DPG-Tagung Dresden 2014.

2013

• Kersten, F.; Schmid, A.; Bordihn, S.; Müller, J. W.; Heitmann, J.: "Role of annealing conditions on surface passivation properties of ALD Al₂O₃ films.", Energy Procedia, 38, 843-848 (2013). DOI: 10.1016/j.egypro.2013.07.354.
• Seidel, P.; Geyer, M.; Lehninger, D.; Schneider, F.; Klemm, V.; Heitmann, J.: "Germanium nanostructures in high-K materials.", ECS Transactions, 53 (1) (2013), 237-243
• Krupinski, M.; Kasic, A.; Hecht, T.; Klude, M.; Erben, E.; Heitmann, J.; Mikolajick, T.: "Inline-characterization and step coverage optimization of deposited dielectrics in DRAM structures.", IEEE Trans. on Semicond. Manufacturing, 26 (2), 6478839 (2013), 253-259.
• Weinreich, W.; Wilde, L.; Mueller, J.; Sundqvist, J.; Erben, E.; Heitmann, J.; Lemberger, M.; Bauer, A. J.: "Structural properties of as deposited and annealed ZrO₂ influenced by atomic layer deposition, substrate, and doping.", J. Vac. Sci. Techno. A: Vacuum, Surfaces, and Films, 31 (1) (2013), 01A119/1-01A119/9.
• Haas, S.; Schneider, F.; Himcinschi, C.; Klemm, V.; Schreiber, G.; Borany, J. von; Heitmann, J.: "Ge nanoparticle formation by thermal treatment of rf-sputtered ZrO₂/ZrGe₂O₃ superlattices.", J. Appl. Phys., 113 (2013), 044303.

2012

• Bordihn, S.; Mertens, V.; Engelhart, P.; Kersten, F.; Mandoc, M.M.; Müller, J.W.; Kessels, W.M.M.: Surface passivation by Al₂O₃ and a-SiN_x:H Films Deposited on Wet-Chemically Conditioned Si Surfaces., ECS J. Solid State Sci. Technol., 1 (6) (2012), P320-P325
• Benner, F.; Haas, S.; Schneider, F.; Klemm, V.; Schreiber, G.; Borany, J. von; Mikolajick, T.; Heitmann, J.: "Silicon and Germanium Nanoclusters Embedded in Zirconium Dioxide Matrices.", ECS J. Solid State Sci. Technol., 1 (6) (2012), N135-N138.
• Müller, J.; Polakowski, P.; Olsen, T.; Müller, S.; Schröder, U.; Heitmann, J.: "Stabilization of ferroelectric HfO2: The impact of mechanical encapsulation.", Präsentation: E-MRS Strasbourg, Spring Meeting 2012.
• Benner, F.; Haas, S.; Schneider, F.; Klemm, V.; Schreiber, G.; von Borany, J.; Heitmann, J.: "Semiconductor Nanocrystals Embedded in High-k Materials.", Präsentation: ECS 221st Meeting Seattle 2012, veröffentlicht in: ECS Trans. 45 (3) (2012) 9-16., DOI: 10.1149/1.3700867
• Weinreich, W.; Wilde, L.; Müller, J.; Erben, E.; Heitmann, J.; Lemberger, M.; Bauer: "Structural properties of ZrO₂ after deposition and PDA influenced by ALD, substrate, and doping.", Präsentation: ALD conference Dresden 2012.

2011

• Krupinski, M.; Kasic, A.; Hecht, T.; Klude, M.; Heitmann, J.; Erben, E.; Mikolajick, T.: "Optical characterization of three-dimensional structures within a DRAM capacitor.", Poster: SPIE München 2011.
• Krause, A.; Weber, W. M.; Schröder, U.; Pohl, D.; Rellinghaus, B.; Heitmann, J.; Mikolajick, T.: "Reduction of leakage currents with nanocrystals embedded in an amorphous matrix in metal-insulator-metal capacitor stacks.", Appl. Phys. Lett., 99 (2011), 222905.
• Krause, A.; Weber, W.; Jahn, A.; Richter, K.; Pohl, D.; Rellinghaus, B.; Schröder, U.; Heitmann, J.; Mikolajick, T.: "Evaluation of the electrical and physical properties of thin calcium titanate high-k insulators for capacitor applications.", J. Vac. Science and Techn. B 29 (2011), DOI: 10.1116/1.3521507
• Martin, D.; Grube, M.; Weinreich, W.; Müller, J.; Wilde, L.; Erben, E.; Weber, W.; Heitmann, J.; Schröder, U.; Mikolajick, T.; Riechert, H.: "Macroscopic and microscopic electrical characterizations of high-k ZrO2 and ZrO2/Al2O3/ZrO2 metal-insulator-metal structures.", J. Vac. Science and Techn. B 29 (1) (2011), DOI: 10.1116/1.3523397
• Martin, D.; Grube, M.; Reinig, P.; Oberbeck, L.; Heitmann, J.; Weber, W. M.; Mikolajick, T.; Riechert, H.: "Influence of composition and bottom electrode properties on the local conductivity of TiN/HfTiO₂ and TiN/Ru/HfTiO₂ stacks.", Appl. Phys. Lett., 98 (2011), DOI: 10.1063/1.3533802
• Geyh, M. A.; Krbetschek, M. R.: "Zum radiometrischen Alter des Holstein-Interglazials. Forschungen zur Urgeschichte im Tagebau von Schöningen 1.", (zur Veröffentlichung angenommen).
• Lang, S.; Hornung, J.; Krbetschek, M.; Ruckwied, K.; Hoppe, A.: "Der Ablagerungsraum am Rand des Oberrheingrabens in Darmstadt im Mittel- und Oberpleistozän.", Geologisches Jahrbuch Hessen, Band 137.
• Krbetschek, M. R.: "Sediment age determination by luminescence methods.", In: Sirocko, F.: The stratigraphic framework of the Eifel dry maar drilling project. Quaternary Sciences Reviews (submitted)
• Lauer, T.; Frechen, M.; Klostermann, J.; Krbetschek, M.; Schollmayer, G.; Tsukamoto, S.: "Luminescence dating of Last Glacial and Early Holocene uvial deposits from the Lower Rhine – methodological aspects and chronological framework.", Z. dt. Ges. Geowiss. 162/1, 47-61.
• Lauer, T.; Krbetschek, M.; Frechen, M.; Tsukamoto, S.; Hoselmann, C.; Weidenfeller, M.: "Infrared Radiofluorescence (IR-RF) dating of Middle Pleistocene fluvial archives of the Heidelberg Basin (Southern Germany).", Geochronometria, DOI 10.2478/s13386-011-0006-9.
• Schirrmeister, L.; Grosse, G.; Schnelle, M.; Fuchs, M.; Krbetschek M. R.; Ulrich, M.; Kunitsky, V.; Grigoriev, M.; Andreev, A.; Kienast, F.; Meyer, H.; Babiy, O.; Klimova, I.; Bobrov, A.; Wetterich, S., Schwamborn, G.: "Late Quaternary paleoenvironmental records from the western Lena Delta, Arctic Siberia.", Palaeogeography, Palaeoclimatology, Palaeoecology, 299 (2011), 175-196.