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Publikationen IAP

  • Hennig, J.; Klier, J.; Duran, S.; Hsu, K.-S.; Beyer, J.; Röder, C.; Beyer, F. C.; Schüler, N.; Vieweg, N.; Dutzi, K.; Freymann, G. v.; Molter, D. : Wide-range resistivity characterization of semiconductors with terahertz time-domain spectroscopy Optics Express 32 (2024) 21028-21041, DOI:10.1364/OE.519564.
  • A. Stapf, N. Zomack, C. Bellmann, N. Schubert, A. Neumann, F. Buchholz, T. Kollek, A. Helfricht, M. Mohammadi, A. Weber, M. Müller, E. Kroke, "Aqueous HF-(HCl)-Cl2 Mixtures for Saw-Damage Removal and Spray Texturing of Monocrystalline Silicon Solar Cells", in IEEE Journal of Photovoltaics, vol. 14, no. 3, pp. 414-421, May 2024, doi: 10.1109/JPHOTOV.2024.3380447

  • R. Tschagaew, C. Röder, A. Kaas and J. Heitmann, "Luminescence Spectroscopy of Mechanically Processed Lithium-Ion Battery Cells," 2023 IEEE SENSORS, Vienna, Austria, 2023, pp. 1-4, doi: 10.1109/SENSORS56945.2023.10325129.
  • J. Kern, J. Heitmann, M. Müller, "Importance of the Buffer Layer Properties for the Performance of Perovskite/Silicon Tandem Solar Cells", ACS Appl. Energy Mater. vol. 6, p. 2199–2206, 2023. https://doi.org/10.1021/acsaem.2c03288
  • A. Weber, M. Mohammadi, M. Trempa, T. Buck, J. Heitmann, M. Müller, "Influence of Aluminum Co-Doping on Current-Induced Degradation and Regeneration Kinetics in Boron-Doped CZ PERC Solar Cells", 50th IEEE Photovoltaic Specialists Conference, San Juan, Puerto Rico, June 2023.
    https://doi.org/10.1109/PVSC48320.2023.10359722
  • J. Kern, J. Heitmann, M. Müller, "TCAD Investigations on the Tunneling Mechanisms and the Impact of Doping at the TCO/HTL Interface of Perovskite/Silicon Tandem Solar Cells", tandemPV, Chambéry, France, 2023.
  • G. Gaspar, F. C. Serra, J. M. Serra, K. Lobato, F. Geml, G. Hahn, J. Kern, M. Müller, L. Vines, A. Fave, "Formation of Crystalline Silicon Tunnel Junctions for Perovskite on Silicon Tandem Solar Cells", tandemPV, Chambéry, France, 2023. +  XXI Congresso da Sociedade Portuguesa de Materiais – MATERIAIS 2023, Portuguese Materials Society (SPM), Apr 2023, Guimarães, Portugal.
  • W. Veurman, J. Kern, M. Müller, R. Peibst, F. Haase, S. Kajari-Schröder, "Light dependency of IV-Hysteresis in perovskite solar cells modelled by slow - shallow trap states", International Conference on Perovskite Solar Cells and Optoelectronics (PSCO), Oxford, UK, 2023.
  • G. Gaspar, F. C. Serra, J. M. Serra, K. Lobato, F. Geml, G. Hahn, J. Kern, M. Müller, L. Vines, A. Fave, "Gas-Immersion Laser-Doped Silicon Tunnel Junctions for Multi-junction Solar Cells", European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC), Lisbon, Portugal, 2023.
  • V. Garbe, S. Seidel, A. Schmid, U. Bläß, E. Meissner, J. Heitmann: "Ultra-low resistance Au-free V/Al/Ti/TiN ohmic contacts for AlGaN/GaN HEMTs", Applied Physics Letters, 123(20), 2023, doi: 10.1063/5.0171168.
  • K. E. Falidas, M. B. Everding, A. E. Viegas, M. Czernohorsky, J. Heitmann: "Automated reliability calculation of failure rate, lifetime extrapolation and prediction for embedded Metal-Insulator-Metal capacitors using an optimized Time-Dependent-Dielectric-Breakdownmodel", Microelectronics Reliability, 150, 2023, doi: 10.1016/j.microrel.2023.115191.
  • A. E. Viegas, K. Kuehnel, C. Mart, M. Czernohorsky, J. Heitmann: "Stabilizing Antiferroelectric-Like Aluminum-Doped Hafnium Oxide for Energy Storage Capacitors", Advanced Engineering Materials, 25(20), 2023, doi: 10.1002/adem.202300443.
  • S. Gersdorf, V. Schildknecht, E. Schumann, S. Seidel, B. Torger, Q. Prasser, N. Frenzel, A. Lißner, J. Heitmann, F. Mertens, G. Frisch, F. A. Plamper: "Aqueous Polyelectrolyte Electrodeposition: The Effects of Alkyl Substitution and Varying Supporting Electrolyte Concentrations on the Deposition Efficiency", ChemElectroChem, 10(17), 2023, doi:10.1002/celc.202300217.
  • K. Falidas, K. Mertens, M. Everding, M. Czernohorsky, J. Heitmann: "ZrAlxOy high-k dielectrics for MIM decoupling capacitors in the BEOL", In 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT2023-Proceedings, 2023, doi: 10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134346.
  • K. E. Falidas, K. Kühnel, M. Rudolph, M. B. Everding, M. Czernohorsky, J. Heitmann: "Three-Dimensional Metal-Insulator-Metal Decoupling Capacitors with Optimized ZrO2 ALD Properties for Improved Electrical and Reliability Parameters", Materials, 15(23), 2022, doi: 10.3390/ma15238325.

  • Lehninger, D.; Honeit, F.; Rafaja, D.; Klemm, V.; Röder, Ch.; Khomenkova, L.; Schneider, F.; von Borany, J.; Heitmann, J.: "Size- and position-controlled Ge nanocrystals separated by high-k dielectrics" MRS Bulletin, May 2022, DOI:10.1557/s43577-022-00311-8.
  • Mtchedlidze, T.; Schmid, A.; Heitmann, J.: "Characterization of ultrathin FDSOI stacks using low field mobility" physica status solidi a (applications and material science), May 2022, DOI:10.1002/pssa.202200133.
  • Gaspar, G.; Serra, J. M.; Kern, J.; Müller, M.: “TCAD Simulation of Electrical Characteristics of Silicon Tunnel Junctions for Monolithically Integrated Silicon/Perovskite Tandem Solar Cells”, SiliconPV, Konstanz, Germany, 2022. + BHT Freiberg / Silicon Days (2022); AIP Conference Proceedings vol. 2826, p. 070001, 2023. DOI: https://doi.org/10.1063/5.0141125
  • Müller, M.; Heitmann, J.; Fischer, G.: „Improving a Grey Box Model of Current-Voltage Parameters for Optimization and Fault Detection of PERC Solar Cells “, 20th European Advanced Process Control and Manufacturing (apc|m) Conference, 2022. (Oral)
  • Müller, M.; Urban, T.; Altermatt, P. P.; Heitmann, J.: „FRay – A Free From Freiberg Ray tracer for the PV community”, 2022 MRS Spring Meeting, May 2022, Honolulu, HI, USA.
  • Weber, A.; Heitmann, J.; Schmid, A.; Müller, M.: „Comparison of Light– and Carrier–Induced Degradation for LeTID–Sensitive PERC Silicon Solar Cells“, Gettering and Defect Engineering in Semiconductor Technology (GADEST) Conference, Mondsee, Austria, 2022.
  • Y. Raffel, S. De, M. Lederer, R. R. Olivo, R. Hoffmann, S. Thunder, L. Pirro, S. Beyer, T. Chohan, T. Kämpfe, K. Seidel, J.Heitmann: "Synergistic Approach of Interfacial Layer Engineering and READ-Voltage Optimization in HfO2-Based FeFETs for In-Memory-Computing Applications", ACS Applied Electronic Materials, 4(11):5292–5300, 2022, doi:10.1021/acsaelm.2c00771
  • D. Steinbach, S. Gersdorf, J. Heitmann, F. Mertens: "Charge Transport of Coordination Polymers Containing Rhodium Paddlewheel Units", Journal of Physical Chemistry C, 126(38):16421–16428, 2022; doi: 10.1021/acs.jpcc.2c04632.
  • T. Urban, M. Müller, J. Heitmann: "Full Analysis of Series Resistance Components and Their Degradation in Temperature Cycling of PERC Solar Cells" In AIP Conference Proceedings, volume 2487, 2022, doi: 10.1063/5.0089278.
  • V. Garbe, A. Schmid, S. Seidel, B. Abendroth, H. Stöcker, P. Doering, D. C. Meyer, J. Heitmann: "Au-Free Ohmic Contacts and Their Impact on Sub-Contact Charge Carrier Concentration in AlGaN/GaN Heterostructures", Physica Status Solidi (B) Basic Research, 259(2), 2022, doi: 10.1002/pssb.202100312.
  • Y. Raffel, M. Drescher, R. Olivo, M. Lederer, R. Hoffmann, L. Pirro, T. Chohan, T. Kampfe, K. Seidel, S. De, J. Heitmann: "Three Level Charge Pumping On Dielectric Hafnium Oxide Gate", In IEEE International Integrated Reliability Workshop Final Report, volume2022-October, 2022, doi: 10.1109/IIRW56459.2022.10032750.
  • A. D. L. Ribeiro, M. C. Fuchs, S. Lorenz, C. Röder, Y. Madriz, E. Herrmann, R. Gloaguen, J. Heitmann: "Multi sensor characterization of WEEE polymers: spectral fingerprints for the recycling industry", In Proceedings of SPIE -The International Society for Optical Engineering, volume12138, 2022, doi: 10.1117/12.2632693.
  • S. Seidel, V. Garbe, A. Schmid, J. Heitmann: "High-k Gate Oxide Integration and Ohmic Contact Development for AlGaN/GaN MISHEMTs", In ECS Transactions, volume108, pages 3–18, 2022, doi: 10.1149/10802.0003ecst.
  • Y. Raffel, R. Olivo, M. Lederer, F. Muller, R. Hoffmann, T. Ali, K. Mertens, L. Pirro, M. Drescher, S. Beyer, T. Kampfe, K. Seidel, L. M. Eng, J. Heitmann: "Endurance improvements and defect characterization in ferroelectric FETs through interface fluorination", In 2022 IEEE International Memory Workshop, IMW2022-Proceedings, 2022, doi: 10.1109/IMW52921.2022.9779277.
  • A. Viegas, K. Falidas, T. Ali, K. Kuhnel, R. Hoffmann, C. Mart, M. Czernohorsky, J. Heitmann: "Reliability of Ferroelectric and Antiferroelectric Si:HfO2 materials in 3D capacitors by TDDB studies", In IEEE International Reliability Physics Symposium Proceedings, volume2022-March, pages P471–P475, 2022, doi: 10.1109/IRPS48227.2022.9764517.
  • K. Falidas, K. Mertens, R. Hoffmann, M. Czernohorsky, J. Heitmann: "Al2O3-HfO2 mixed high-k dielectrics for MIM decoupling capacitors in the BEOL", In 2022 International Symposiumon VLSI Technology, Systems and Applications, VLSI-TSA2022, 2022, doi: 10.1109/VLSI-TSA54299.2022.9770977.

     

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