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The substances to be deposited are vaporised in a high-vacuum chamber. They are deposited onto the substrate without a chemical reaction taking place.

The Bestec sputtering system has a preparation chamber for pre-cleaning using plasma and two process chambers. These each allow RF (radio frequency) and DC (direct current) and substrate heating up to 600 °C. We use sputter chamber 1 for the deposition from metallic targets (2 sources of 8 inches each), preferably aluminium and titanium. Sputter chamber 2 has three sources (3 inches each) in a confocal arrangement. This allows for simultaneous sputtering from several sources or the deposition of different thin layers in alternating sequence. The layer thicknesses can be monitored in situ using oscillating crystals. The vapour deposition system has a high-vacuum chamber in which the samples are fixed in the upper part of the chamber with the upper side facing downwards. Crucibles containing the materials to be vaporised are located some distance below. These can be metals, non-metals, oxides or organic substances. If the boiling point is relatively low, resistance heating is sufficient; higher-boiling materials can be vaporised using an electron beam. Due to the long free path between the source and the sample, the coating is very directional. An oscillating quartz crystal measurement is used to monitor the coating thickness.

Die Bedampfungsanlage besitzt eine Hochvakuumkammer, in der die Proben im oberen Bereich der Kammer mit der Oberseite nach unten befestigt werden. In einigem Abstand darunter befinden sich Tiegel mit den zu verdampfenden Materialien. Dies können Metalle, Nichtmetalle, Oxide aber auch organische Stoffe sein. Bei relativ niedrigem Siedepunkt reicht eine Widerstandsheizung aus, höher siedende Stoffe können mittels Elektronenstrahl verdampft werden. Durch eine große freie Weglänge zwischen Quelle und Probe geschieht die Beschichtung hier sehr gerichtet. Für das Monitoring der Schichtdicke wird eine Schwingquarzmessung genutzt.