Semiconductor Materials Working Group
Working Group Leader
Dr. rer. nat. Olf Pätzold
Semiconductor Materials
Deputy Director of the Institute
Ledebur Building, Room E 23
+49 3731 39-2767
olf [dot] paetzold [at] inemet [dot] tu-freiberg [dot] de
Areas of work
- Semiconductor crystal growth from the melt and gas phase
- Growth of elemental and compound semiconductors, e.g. (Al)GaN, GaAs, Ge, Si
- Flow and solidification experiments with model melts
- Preparation and characterisation of semiconductor materials
Current research projects
- InGaGe – Novel GaN wafer production, a sub-project of the EU collaborative project InGaGe: Production of In, Ga, Ge, Sb and As semiconductor raw materials from European resources, www.ingage-horizon.eu, 1 May 2026 – 30 April 2030.
- optGaN – Gallium nitride with optimised structural properties, Dr Erich Krüger Foundation at the TU Bergakademie Freiberg, 1 July 2024 – 31 December 2026.
- Experimental investigation of flow in a complex force field with induction heating, DFG project, planned start date: 1 January 2027.
