The Semiconductor Devices working group at the Institute of Applied Physics focusses on the process development and integration of new materials for micro-, nano- and power electronics. This includes the production and characterisation of thin dielectric layers and electrical contacts on Si, GaAs and semiconductors with a large band gap such as GaN, SiC and AlN. Using the extensive technical equipment of the Central Clean Room Laboratory at TU BA Freiberg, semiconductor devices such as metal-insulator-semiconductor (MIS) structures, diodes and heterojunction field-effect transistors (HFET/MISHFET) can be produced. The subsequent electrical characterisation using state-of-the-art equipment enables the investigation of important physical properties of the materials produced and targeted process development.

• Processing of small sample pieces from 1x1 cm² up to 6″ wafers is possible
• Experience with different semiconductors (Si, GaN, GasAs, SiC, AlN ...).)
• Deposition of dielectrics (SiO₂, Al₂O₃, Si₃N₄, TiO₂, ZrO₂, ...) by means of thermal, chemical (CVD) and atomic layer deposition (ALD)
• Deposition of metals (Ag, Al, Au, Ni, Sc, Ti, V, ...) by means of physical processes (PVD)
• Structuring by means of lithography (Maskaligner: CD < 3 µm, laser writer: CD < 1 µm)
• wet chemical and dry etching processes
• thermal treatment under a reducing, oxidising or inert gas atmosphere as well as rapid thermal processes (RTA)

• Current-voltage measurements (dc and pulsed) for the determination of leakage currents, contact and sheet resistances as well as parametric device characteristics
• Relaxation measurements for the determination of dielectric absorption
• Capacitance-voltage measurements for the determination of oxide charge, substrate doping and interface state density
• conductance measurements to determine the interface state density on MIS structures
• deep level transient spectroscopy (DLTS) to determine defect states in semiconductor materials
• temperature-dependent measurements are possible on wafers up to 300 mm in size from -60°C to +300°C
• cryogenic measurements on small samples are possible up to 77 K

A detailed overview of the existing technical equipment and processes can be found here:

IAP equipment Central cleanroom laboratory

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