Direkt zum Inhalt
  • B. H. Bairamov, V. V. Toporov, V. A. Voitenko, G. Irmer, J. Monecke
    Electron-phonon interactions in multi-component plasma created by light-and heavy hole gas in polar semiconductors: from bulk to quantum dot structures
    phys. stat. sol. (c) 1 (2004) 2773 – 2778
  • A. Dorner-Reisel, C. Schürer, G. Irmer, E. Müller
    Electrochemical corrosion behaviour of uncoated and DLC coated medical grade Co28Cr6Mo
    Surf. Coat. Technol. 177-178 (2004) 830 - 837
  • M. Florovic, R. Srnanek, J. Kovac, J. Geurts, M. Lentze, G. Irmer, B. Sciana, D. Radziewicz, M. Tlaczala
    Diagnostics of InxGa1-xAs/GaAs quantum well by micro-photoluminescence
    Proceedings of the 10th International Workshop on Applied Physics of Condensed Matter (APCOM), June 16 – 18, 2004, Casta-Pila, Slovak Republic, pp. 66 – 69
  • M. Herms and G. Irmer
    Raman spectroscopy – a versatile tool for characterization of semiconductor materials, devices and processes
    University of Dayton, Ohio, USA, October 29, 2004, (Kolloquiumsvortrag)
  • G. Irmer, J. Monecke, P. Verma
    Light scattering of semiconducting nanoparticles, in: Encyclopedia of Nanoscience and Nanotechnology (Ed. H. S. Nalwa), American Scientific Publishers, California, USA, 2004, 561 - 586
  • G. Irmer, P. Prunici, J. Monecke, L. Sirbu, I. M. Tiginyanu, G. Gärtner
    Nanoporous InP studied by micro-Raman scattering
    19th International Conference on Raman Spectroscopy (ICORS 2004), August 8 – 13, 2004, Gold Coast, Australia, pp. 496 - 497
  • J. Monecke, J. Bezrukova, W. Cordts, G. Richardson
    Second order nonlinear susceptibility coefficients of porous semiconducting compounds
    phys. stat. sol. (b) 241 (2004) R8 - R10
  • T. Monecke, J. Monecke, J. B. Gemmell
    Fractal analysis of vein thicknesses in drill core from the Hellyer massive sulphide deposit, 
    Australia Proceedings of the 4th International Conference on “Fractals and Dynamic Systems in Geoscience”, May 19 – 22, 2004, TU München/Kloster Seeon, S. 70 – 73
  • T. Monecke, J. Monecke, P. M. Herzig, J. B. Gemmell, W. Mönch
    Fractal analysis of element abundance data: a dynamic model for the metasomatic enrichment of base and precious metals
    Proceedings of the 4th International Conference on “Fractals and Dynamic Systems in Geoscience”, May 19 – 22, 2004, TU München/Kloster Seeon, S. 74 – 77
  • P. Prunici, G. Irmer, J. Monecke, L. Sirbu, I. M. Tiginyanu
    Micro-Raman study on columnar GaAs nanostructures
    4th International Conference on Porous Semiconductors - Science and
    Technology, March 14 - 19, 2004, Cullera-Valencia, Spain, pp. 258 - 259
  • P. Prunici, G. Irmer, J. Monecke, I. M. Tiginyanu
    Charge carriers in columnar nanostructures of porous GaAs and InP using micro-Raman scattering
    Tagungsband der Frühjahrstagung des Arbeitskreises Festkörperphysik bei der DPG, Regensburg (2004) S. 234
  • P. Prunici, G. Irmer, J. Monecke, R. Srnánek, D. Radziewicz
    Charge carrier excitation in a GaAs:Si bevelled structure studied by using micro-raman spectroscopy
    Proceedings of the 10th International Workshop on Applied Physics Condensed Matter (APCOM), June 16 – 18, 2004, Castá – Pila, Slovak Republic, pp. 211 – 214
  • W. W. Rudolph, D. Fischer, G. Hefter, G. Irmer
    Raman spectroscopic investigations of speciation in MgS04(aq)
    19th International Conference on Raman Spectroscopy (ICORS 2004),
    August 8 – 13, 2004, Gold Coast, Australia, pp. 146 - 147
  • W. W. Rudolph and G. Irmer
    Raman and infrared spectroscopic investigations of aqueous alkali metal phosphate (PO43-) solutions
    19th International Conference on Raman Spectroscopy (ICORS 2004),
    August 8 – 13, 2004, Gold Coast, Australia, pp. 358 - 359
  • W. W. Rudolph and G. Irmer
    Analysis of ionic species in natural mineral waters studied by Raman spectroscopy
    19th International Conference on Raman Spectroscopy (ICORS),
    August 8 – 13, 2004, Gold Coast, Australia, pp. 362 - 363
  • W. W. Rudolph, D. Fischer, C. C. Pye, G. Irmer
    Raman and infrared spectroscopic investigation of In(OH2)3+(aq).
    19th International Conference on Raman Spectroscopy (ICORS),
    August 8 – 13, 2004, Gold Coast, Australia, pp. 370 - 371
  • R. Srnánek, J. Geurts, M. Lentze, G. Irmer, P. Brdecka, P. Kordos, A. Förster, B. Sciana, D. Radziewicz, M. Tlaczala
    Study of d-doped GaAs layers by micro-Raman spectroscopy on bevelled samples
    Appl. Surface Science 230 (2004) 379 – 385
  • R. Srnánek, L. Peternai, J. Kovác, M. Florovic, J. Geurts, M. Lentze, G. Irmer, A. Förster, P. Kordos
    Characterization of Si delta-doped AlGaAs/GaAs quantum-well by optical methods on bevelled structures
    28th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe (WOCSDICE), May 17 – 19, 2004, Smolenice Castel, Slovakia, pp. 139 – 140
  • R. Srnanek, R. Kinder, M. Florovic, G. Irmer, P. Prunici, J. Geurts, M. Lentze, B. Sciana, E. Korecka, I. Novotny, D. Radziewicz, M. Tlaczala
    Diagnostics of Zn-delta doped GaAs layers by micro-photoluminescence, micro-Raman spectroscopy and ECV method
    Proceedings of the 11th Electronic Devices and Systems Conference (EDS), September 9 – 10, 2004, Brno, Czech Republic, pp. 269 – 272
  • R. Srnanek, M. Vesely, A. Vincze, M. Florovic, J. Kovac, G. Irmer, P. Prunici, B. Sciana, D. Radzdiewicz, M. Tlaczala
    Determination of doping concentration in very thin GaAs:Si layers by micro-Raman spectroscopy on beveled samples
    10th Joint Vacuum Conference (JVC), September 28 – Oktober 2, 2004, Portoroz, Slovenija, pp. 92 – 93 (Poster)
  • A. Vincze, J. Kovac, R. Srnanek, J. Sigmund, H. L. Hartnagel, G. Irmer
    Annealing behaviour of low temperature grown GaAs investigated by Raman spectroscopy
    Proceedings of the 5th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM), October 17 – 21, 2004, Smolenice Castle, Slovakia, pp. 115 – 118