- G. Irmer, M. Wenzel, J. Monecke
Light scattering by a multicomponent plasma coupled with longitudinal-optical phonons: Raman spectra of p-type GaAs:Zn
Phys. Rev. B56 (1997) 9524 - M. Wenzel, G. Irmer, J. Monecke and, W. Siegel
Hole mobilities and the effective Hall factor in p-type GaAs
J. Appl. Phys. 81 (1997) 7810 - G. Irmer, J. Monecke, M. Wenzel
The dielectric function in p-type III-V semiconductors
J. Physics: Condens. Matter 9 (1997) 5371 - J. Kortus, J., Monecke
Theory of incompletely isovalent delta-doped semiconductors
J. Phys.: Condens. Matter 9 (1997) 5321 - J. Monecke
Exact properties of the self-energy of mixed crystals
Phys. Rev. B55 (1997) 7515 - W. Siegel, J. Monecke, S. Schulte and G. Kühnel
Hall mobility lowering in undoped n-type bulk GaAs due to
cellular-structure related nonuniformities
J. Appl. Phys. 81 (1997) 3155 - J. Miao, I. M. Tiginyanu, H. L. Hartnagel, G. Irmer, J. Monecke and B. L. Weiss
The characteristics of high-resistance layers produced in n-GaAs using MeV-nitrogen implantation for three-dimensional structuring
Appl. Phys. Letters 70 (1997) 847 - I. M. Tiginyanu, G. Irmer, J. Monecke, H. L. Hartnagel
Micro-Raman-scattering study of surface-related phonon modes in porous GaP
Phys. Rev. B 55 (1997) 6739 - I. M. Tiginyanu, G. Irmer, J. Monecke, A. Vogt, H. L. Hartnagel
Porosity-induced modification of the phonon spectrum of n-GaAs
Semicond. Sci. Technol. 12 (1997) 491 - B. H. Bairamov, G. Irmer, J. Monecke, V. K. Negoduyko, V. V. Toporov, V. A. Voitenko, B. P. Zakharchenya
Nonequilibrium fluctuations of light and heavy hole gas and observation of acoustic plasma oscillations associated with inter-valence-band photoeffect in p-GaAs
phys. stat. sol. (b) 204 (1997) 456 - W. Siegel, S. Schulte, C. Reichel, J. Monecke, G. Kühnel
Anomalous temperature dependence of the Hall mobility in undoped bulk GaAs
J. Appl. Phys. 82 (1997) 3832 - M. Wenzel, G. Irmer, J. Monecke
Electronic Raman spectra of shallow acceptors in p-type InP
Solid State Comm. 104 (1997) 371 - O. Pätzold, K. Sonnenberg, G. Irmer
Defect Processes Causing Free Carrier Variations around Dislocations in n-type doped GaAs
Mat. Sci. Eng. B44 (1997) 217 - H-P. Martin, E. Müller, G. Irmer, F. Babonneau
Crystallisation behaviour and polytype transformation of polymer-derived silicon carbide
Journ. Europ. Ceramic Society 17 (1997) 59 - L. Nasdala
Reticulit - das leichteste Gestein?
MineralienWelt 8 (1997) 47 - L. Zhu, K. Seff, T. Witzke, L. Nasdala
Crystal Structure of Zn4Na(OH)6SO4Cl · 6H2O
J. Chem. Cryst. 27 (1997) 325 - J. Götze, D. Habermann, U. Kempe, L. Nasdala, R. D. Neuser, D. K. Richter
High resolution cathodoluminescence combined with U-Pb geochronology (SHRIMP) of detrital zircons: A case study of the Cretaceous Weferlingen quartz sand (Germany)
GAEA Heidelbergensis, 3 (1997) 145 - L. Nasdala, A. Massanek, B. Ullrich, T. Witzke
Mineralvorkommen in der Nordsächsischen Grauwacke bei Oßling/Lausitz
Der Aufschluss 48 (1997) 81 - L. Nasdala, A. Beran, D. Wolf
Incorporation of hydroxyl groups and molecular water in zircons
Ber. Deutsch. Geol. Ges., Beiheft z. Eur. J. Mineral. 9 (1997) 266 - S. Anand, P. Verma, K. P. Jain
Resonant Raman scattering at E0 gap in ZnSe:Li
Proc. Of National Laser Symposium, Indore, India, 1997 - J. Kortus and J. Monecke
Electronic Structure of Incompletely Isovalent delta-doped Layers in Semiconductors
8th International Workshop on Computational Condensed Matter Physics: Total Energy and Force Methods
Trieste, 1997, Italy, p. 75 - B. H. Bairamov, V. A. Voitenko, V. K. Negoduyko, V. V. Toporov, B. P. Zakharchenya, G. Irmer, J. Monecke
Experimental observation of acoustic plasma oscillations in p-GaAs associated with intervalence-band photoeffect
Proc. Of the 23rd Intern. Symposium on Compound Semiconductors,
Inst. Phys. Conf. Ser. No 155, IOP Publ. Ltd., Bristol, 1997, p. 791 - G. Irmer, P. Verma, W. Cordts, J. Monecke
Niederfrequente Ramanstreuung an Nanokristalliten in Glas
Tagungsband Ramanspektroskopie, Erfurt, 1997, S. 62 - M. Wenzel, P. Gippner, K.-D. Schilling, W. Seidel, E. Grosse, G. Irmer, F. Wirbeleit, H. Wirth
Free Electron Laser Annealing of Ion Implanted SiC
Jahresbericht 1997, Forschungszentrum Rossendorf - W. Cordts, G. Irmer, J. Monecke
Size determination of semiconductor nanocrystals by Raman spectroscopy
Frühjahrstagung Halbleiterphysik, Münster 1997, Verhandlungen der
Deutschen Physikalischen Gesellschaft 5/97, S. 698 - I. M. Tiginyanu, G. Irmer, J. Monecke, H. L. Hartnagel
MicroRaman Scattering Study of Surface-Related Phonon Modes in Porous GaP
Frühjahrstagung Halbleiterphysik, Münster 1997, Verhandlungen der
Deutschen Physikalischen Gesellschaft 5/97, S. 698 - M. Wenzel, G. Irmer, J. Monecke
Elektronische Ramanstreuung an p-InP
Frühjahrstagung Halbleiterphysik, Münster 1997, Verhandlungen der
Deutschen Physikalischen Gesellschaft 5/97, S. 698 - O. Pätzold, G. Irmer, K. Sonnenberg
Charakterisierung von Versetzungen in dotiertem, n-leitenden GaAs mittels Photoätzen, µRaman- und µPhotolumineszenz-Spektroskopie
Frühjahrstagung Halbleiterphysik, Münster 1997, Verhandlungen der Deutschen Physikalischen Gesellschaft 5/97, S. 775 - M. Dietrich, J. Kortus, W. Cordts, S. Unterricker
Elektrische Feldgradienten in nichtkubischen Halbleitern - Allelektronenrechnungen
Frühjahrstagung Halbleiterphysik, Münster 1997, Verhandlungen der
Deutschen Physikalischen Gesellschaft 5/97, S. 713 - O. Pätzold, G. Irmer, K. Sonnenberg
Characterization of denuded zones around dislocations in doped GaAs by phase contrast microscopy and photoluminescence
Inst. Phys. Conf. Ser. No 160, Proc. of the VIIth Intern. Conf. on Defect Recognition and Image Processing, Templin 1997, S. 119