Publikationen 1999

  • P. Verma, J. Kortus, J. Monecke, S. Anand, K. P. Jain
    Phonon sidebands of electronic transitions in Li-doped CdS
    Phys. Rev. B 59 (1999) 15748
  • A. Sarua, I. M. Tiginyanu, V. V. Ursaki, G. Irmer, J. Monecke, H. L. Hartnagel
    Charge carrier distribution in free-standing porous GaP membranes studied by Raman spectroscopy
    Solid State Comm. 112 (1999) 581
  • I. M. Tiginyanu, G. Irmer, J. Monecke, H. L. Hartnagel, A. Vogt, C. Schwab, I.-I. Grob
    Porosity-induced optical phonon engineering in III-V compounds
    Mat. Res. Soc. Symp. Proc. 536 (1999) 99
  • P. Verma, W. Cordts, G. Irmer, J. Monecke
    Acoustic vibrations of semiconductor nanocrystals in doped glasses
    Phys. Rev. B60 (1999) 5778
  • M. Dietrich, D. Degering, J. Kortus, S. Unterricker, M. Deicher, A. Burchard, R. Magerle
    Semiconductors with structurally determined vacancies - PAC studies
    Hyperfine-Interactions 120-121 (1999) 359
  • K. Roth, J. Kortus, M. Herms, D. Porezag, M. R. Pederson
    Partial pressure of phosphorus and arsenic vapor measured by Raman scattering
    Jpn. J. Appl. Phys. 38 (1999) 989
  • B. H. Bairamov, O. Gürdal, A. Botchkarev, H. Morkoç, G. Irmer, J. Monecke
    Direct evidence of tensile strain in wurtzite structure n-GaN layers grown on n-Si(111) using AIN buffer layers
    Phys. Rev. B 60 (1999) 16741
  • D.Schneider, C. Brink, G. Irmer, P. Verma
    Effective mass and bandstructure of n-InAs from magnetophonon resonance and Raman scattering at temperatures between T = 64 and 360 K
    Physica B 256-258 (1998), 625- 628
  • D. Schneider, K. Fricke, M. Wenzel, G. Irmer, C. Rigo, and H. C. Neitzert
    Effective electron mass and optical phonon modes in In0.53Ga0.47As from magnetophonon effect and Raman scattering at temperatures between T=77K and 400K
    Proc.of the Physical Phenomena at High Magnetic Fields-III, Tallahassee, Florida, 24-27 Oct. 1998,
    Eds. Z.Fisk, L.Gor'kov, and R.Schrieffer, World Scientific, Singapore, 1999, 106-109
  • O. Pätzold, G. Gärtner, G. Irmer,and R. Sielemann
    Silicon and boron in non-stoichiometric, melt-grown GaAs
    Physik mikrostrukturierter Halbleiter 10 (1999), 155
  • S. Köhler, G. Irmer, R. Kleeberg, J. Monecke, P. M. Herzig, B. Schulz
    Melanophlogite from the Cascadia accretionary prism, offshore Oregon: First occurence in a cold seep environment
    Beiheft 1 z. Europ. J. Mineral. 11 (1999) 129
  • T. Monecke, J. Monecke, M. Sala, U. Kempe U.
    Quantification of the tetrad effect in rare earth element patterns
    Beiheft 1 z. Europ. J. Mineral. 11 (1999) 160
  • J. Kortus, K. Roth, M. Herms, D. V. Porezag, M. R. Pederson
    The composition of phosphorus and arsenic vapor in view of thermal processing of III-V wafers
    American Physical Society Centennial Meeting, March 20-26, 1999, Atlanta, GA
  • J. Kortus, M. R. Pederson, G. Irmer, J. Monecke
    Influence of cage structures on the vibrational modes and their Raman activity of methane
    American Physical Society Centennial Meeting, March 20-26, 1999, Atlanta, GA
  • M. Herms, V. G. Melov; P. Verma, G. Irmer, H. Okamoto, M. Fukuzawa, K. Oe, M. Yamada
    Characterization of GaAs1-xBix epilayers by Raman scattering and X-ray diffraction
    8th European Workshop on Metal-Organic Vapour Phase Epitaxy and Related Growth Techniques,
    Prague, June 8-11 (1999), proceedings, W2A8, 249-252;
  • P. Verma, M. Herms, G. Irmer, H. Okamoto, K. Oe, M. Yamada
    Micro-Raman investigation of InAsBi epilayers grown by MOVPE
    8th International Conference on Defects - Recognition, Imaging and Physics in Semiconductors,
    Narita, Sept. 15-18 (1999), abstracts, P5-11 (late news);
  • G. Irmer, P. Verma, J. Monecke, M. Herms, G. Goerigk, V. Klemm
    ASAXS studies and Raman scattering on nanocrystallites in glasses
    HASYLAB, DESY; Annual Report 1999, Part 1, 965