M. Wenzel, P. Gippner, K.-D. Schilling, W. Seidel, E. Grosse, G. Irmer, F. Wirbeleit, H. Wirth Free Electron Laser Annealing of Ion Implanted SiC Jahresbericht 1997, Forschungszentrum Rossendorf
B. H. Bairamov, I. K. Polushina, V. Yu Rud’, Yu. V. Rud’, P. G. Schunemann, N. Fernelius, M. C. Ohmer, G. Irmer, J. Monecke Optoelectronic phenomena in single crystal CdGeAs2 and structures on his base Solid State Phys. 40 (1998) 32
M. Wenzel, G. Irmer, J. Monecke, W. Siegel Determination of the effective Hall factor in p-type semiconductors Semicond. Sci. Technol. 13 (1998) 505
G. Irmer, M. Wenzel, J. Monecke. Raman scattering at shallow acceptors in InP phys. stat. sol. (b) 210 (1998) 347
M. Dietrich, J. Kortus, W. Cordts, S. Unterricker Electric Field Gradients in Wurtzite-Type Semiconductors phys. stat. sol. (b) 207 (1998) 13
T. Monecke, J. Monecke, W. Mönch, U. Kempe Mathematical analysis of rare earth element patterns of fluorites from the tin deposit Ehrenfriedersdorf, Germany Beiheft z. Eur. J. Mineral. 10, (1998) 200
L. Nasdala, R. T. Pidgeon, D. Wolf, G. Irmer Metamictization and U-Pb isotopic discordance in single zircons: a combined Raman microprobe and SHRIMP ion probe study Mineralogy and Petrology, 62 (1998) 1-27
L. Nasdala Mineralvorkommen in den riphäischen Grauwacken der Oberlausitz, Sachsen Mitteilungen der Österreichischen Mineralogischen Gesellschaft, 143, (1998) 75-84
L. Nasdala, J. Götze, R. T. Pidgeon, U. Kempe, T. Seifert Constraining a U-Pb age: micro-scale characterization of zircons from Saxonian Rotliegend rhyolites Contributions to Mineralogy and Petrology, 132, (1998) 300-306
L. Nasdala, T. Witzke, B. Ullrich, R. Brett Gordaite, [Zn4Na(OH)6(SO4)Cl·6H2O]: Second occurrence in the Juan de Fuca Ridge, and new data American Mineralogist, 83, 9/10 (1998) 1111-1116
J. Götze, L. Nasdala, R. Kleeberg, M. Wenzel Occurrence and distribution of "moganite" in agate/chalcedony: a micro-Raman, Rietfeld, and cathodoluminescence study Contributions to Mineralogy and Petrology, 133 (1998) 96-105
H.-P. Martin, G. Irmer, E. Müller Submicro structure of silicon carbide derived from poly(methylchlorosilane) European Ceramic Society 18 (1998) 193
O. Paetzold , G. Irmer Effect of melt stoichiometry on shallow acceptor formation in heavily doped GaAs phys. stat. sol. (b) 210 (1998) 575
M. Herms, K. Roth, G. Irmer Composition of arsenic and phosphorus vapour in different annealing geometries - determined by Raman spectroscopy Journal of Crystal Growth 186 (1998) 166
C. Brink, D. Schneider, G. Irmer, P. Verma Temperaturabhängigkeit der effektiven Elektronenmasse von InAs aus Messungen der Magneto-Phonon-Resonanz und Raman-Streuung für Temperaturen zwischen T=90 K und 340 K Frühjahrstagung des Arbeitskreises Festkörperphysik, Regensburg, 1998, Verhandlungen der Deutschen Physikalischen Gesellschaft (VI), 33, HL 24.13 (1998) 730
S. Krull, D. Schneider, G. Irmer, P. Verma Temperaturabhängigkeit der effektiven Elektronenmasse von InSb aus Messungen der Magneto-Phonon-Resonanz, des Schubnikow-de Haas-Effektes und der Raman-Streuung Frühjahrstagung des Arbeitskreises Festkörperphysik, Regensburg, 1998, Verhandlungen der Deutschen Physikalischen Gesellschaft(VI), 33, HL 24.12 (1998) 7 30
O. Pätzold, G. Irmer Effect of melt stoichiometry on shallow acceptor formation in heavily doped GaAs Proceedings 8th International Conference on Shallow-Level lefts in Semiconductors, 27. - 30.7.1998, Montpellier, Frankreich, p. 575
G. Irmer, M. Wenzel, J. Monecke Raman scattering at shallow acceptors in InP Proceedings 8th International Conference on Shallow-Level lefts in Semiconductors, 27.-30.7.1998, Montpellier, Frankreich, p. 347
B. H. Bairamov, V. A. Voitenko, G. Irmer, J. Monecke, V. V. Toporov, B. P. Zakharchenya Near-infrared quasielastic and inelastic electronic light scattering spectroscopy in p-GaAs and p-InP 4th Internatinal Conference on the Physics of semiconductors, 2.-7.8.1998, Jerusalem, Israel (Abstract-Band)
B. H. Bairamov, I. K. Polushina, Yu. V. Rud’, V. Yu. Rud’, G. Irmer, J. Monecke, P. G. Schunemann, N. Fernelius, M. C. Ohmer Direct evidence for anisotropy of optical and electron transport properties of atomic ordering in CdGeAs2 24th International Conference on the Physics of Semiconductors, 2.-7. 8.1998, Jerusalem, Israel (Abstract-Band)
O. Pätzold, G. Irmer, K. Sonnenberg, J. Monecke Incorporation of Boron into doped GaAs 24th International Conference on the Physics of Semiconductors, 2.-7. 8.1998, Jerusalem, Israel (Abstract-Band)
P. Verma, G. Irmer, J. Monecke Laser power dependence of confinement energy in nanoparticles 17th General Conference of the Condensed Matter Division, Grenoble, 25.-29.8. 1998, p. 135
D. Schneider, K. Fricke, M. Wenzel, G. Irmer, C. Rigo, H. C. Neitzert Effective electron mass and optical phonon modes in In0.53Ga0.47As from magnetephonon effect and Raman scattering at temperatures between T = 77 K and 400 K Physical Phenomena at High Magnetic Field-III, 24.-27.10.1998, Tallahassee, USA
D. Schneider, C. Brink, G. Irmer, P. Verma Effective mass and bandstructure of n-InAs from magnetephonon resonance 13th International Conference on high magnetic fields in semiconductor physics, Nijmegen, The Netherlands, 10.-14. 8.
M. Dietrich, D. Degering, S. Unterricker, J. Kortus, M. Deicher, A. Burchard und ISOLDE-COLLABORATION Strukturelle Leerstellen in Halbleitern – PAC-Untersuchungen Frühjahrstagung des Arbeitskreises Festkörperphysik, Regensburg, 1998, Verhandlungen der Deutschen Physikalischen Gesellschaft, S. 715
W. Siegel, G. Kühnel, J. Monecke, C. Reichel, T. Richter, S. Schulte, G. Zychowitz Tiefe Störstellen und ihr Einfluss auf die elektrischen Eigenschaften von undotiertem GaAs BHT-Tagungsheft 1998, S. 21
J. Kortus, K. Roth, M. Herms, D. V. Porezag, and M. R. Pederson The composition of phosphorus & arsenic vapor in view of thermal processing of III-V wafers Proceedings 10th Intern. Conf. on Indium Phosphide and Related Materials, Tsukuba, Japan, 1998, S. 533
R. T. Pidgeon, L. Nasdala, W. Todt Determination of radiation damage ages on parts of zircon grains by Raman microprobe: implications for annealing history and U-Pb stability 8th V. M. Goldschmidt Conference, Toulouse, Mineralogical Magazine, 62A (1998) S. 1174
I. M. Tiginyanu, G. Irmer, J. Monecke, H. L. Hartnagel, A. Vogt, J. J. Grob, C. Schwab Porosity-induced optical phonon engineering in III-V compounds Proc. Fall Meeting, 30. 11. – 4. 12. 1998, Boston, Massachusetts, S. 103
