Publikationen 1998

  • M. Wenzel, P. Gippner, K.-D. Schilling, W. Seidel, E. Grosse, G. Irmer, F. Wirbeleit, H. Wirth
    Free Electron Laser Annealing of Ion Implanted SiC
    Jahresbericht 1997, Forschungszentrum Rossendorf
  • B. H. Bairamov, I. K. Polushina, V. Yu Rud’, Yu. V. Rud’, P. G. Schunemann, N. Fernelius, M. C. Ohmer, G. Irmer, J. Monecke
    Optoelectronic phenomena in single crystal CdGeAs2 and structures on his base
    Solid State Phys. 40 (1998) 32
  • M. Wenzel, G. Irmer, J. Monecke, W. Siegel
    Determination of the effective Hall factor in p-type semiconductors
    Semicond. Sci. Technol. 13 (1998) 505
  • G. Irmer, M. Wenzel, J. Monecke.
    Raman scattering at shallow acceptors in InP
    phys. stat. sol. (b) 210 (1998) 347
  • M. Dietrich, J. Kortus, W. Cordts, S. Unterricker
    Electric Field Gradients in Wurtzite-Type Semiconductors
    phys. stat. sol. (b) 207 (1998) 13
  • T. Monecke, J. Monecke, W. Mönch, U. Kempe
    Mathematical analysis of rare earth element patterns of fluorites from the tin deposit Ehrenfriedersdorf, Germany
    Beiheft z. Eur. J. Mineral. 10, (1998) 200
  • L. Nasdala, R. T. Pidgeon, D. Wolf, G. Irmer
    Metamictization and U-Pb isotopic discordance in single zircons: a combined Raman microprobe and SHRIMP ion probe study
    Mineralogy and Petrology, 62 (1998) 1-27
  • L. Nasdala
    Mineralvorkommen in den riphäischen Grauwacken der Oberlausitz, Sachsen
    Mitteilungen der Österreichischen Mineralogischen Gesellschaft, 143, (1998) 75-84
  • L. Nasdala, J. Götze, R. T. Pidgeon, U. Kempe, T. Seifert
    Constraining a U-Pb age: micro-scale characterization of zircons from
    Saxonian Rotliegend rhyolites
    Contributions to Mineralogy and Petrology, 132, (1998) 300-306
  • L. Nasdala, T. Witzke, B. Ullrich, R. Brett
    Gordaite, [Zn4Na(OH)6(SO4)Cl·6H2O]: Second occurrence in the Juan de Fuca Ridge, and new data
    American Mineralogist, 83, 9/10 (1998) 1111-1116
  • J. Götze, L. Nasdala, R. Kleeberg, M. Wenzel
    Occurrence and distribution of "moganite" in agate/chalcedony: a micro-Raman, Rietfeld, and cathodoluminescence study
    Contributions to Mineralogy and Petrology, 133 (1998) 96-105
  • H.-P. Martin, G. Irmer, E. Müller
    Submicro structure of silicon carbide derived from poly(methylchlorosilane)
    European Ceramic Society 18 (1998) 193
  • O. Paetzold , G. Irmer
    Effect of melt stoichiometry on shallow acceptor formation in heavily doped GaAs
    phys. stat. sol. (b) 210 (1998) 575
  • M. Herms, K. Roth, G. Irmer
    Composition of arsenic and phosphorus vapour in different annealing geometries - determined by Raman spectroscopy
    Journal of Crystal Growth 186 (1998) 166
  • C. Brink, D. Schneider, G. Irmer, P. Verma
    Temperaturabhängigkeit der effektiven Elektronenmasse von InAs aus Messungen der Magneto-Phonon-Resonanz und Raman-Streuung für Temperaturen zwischen T=90 K und 340 K
    Frühjahrstagung des Arbeitskreises Festkörperphysik, Regensburg, 1998,
    Verhandlungen der Deutschen Physikalischen Gesellschaft (VI), 33, HL 24.13 (1998) 730
  • S. Krull, D. Schneider, G. Irmer, P. Verma
    Temperaturabhängigkeit der effektiven Elektronenmasse von InSb aus
    Messungen der Magneto-Phonon-Resonanz, des Schubnikow-de Haas-Effektes und der Raman-Streuung
    Frühjahrstagung des Arbeitskreises Festkörperphysik, Regensburg, 1998,
    Verhandlungen der Deutschen Physikalischen Gesellschaft(VI), 33, HL 24.12 (1998) 7 30
  • O. Pätzold, G. Irmer
    Effect of melt stoichiometry on shallow acceptor formation in heavily doped GaAs
    Proceedings 8th International Conference on Shallow-Level lefts in
    Semiconductors, 27. - 30.7.1998, Montpellier, Frankreich, p. 575
  • G. Irmer, M. Wenzel, J. Monecke
    Raman scattering at shallow acceptors in InP
    Proceedings 8th International Conference on Shallow-Level lefts in
    Semiconductors, 27.-30.7.1998, Montpellier, Frankreich, p. 347
  • B. H. Bairamov, V. A. Voitenko, G. Irmer, J. Monecke, V. V. Toporov, B. P. Zakharchenya
    Near-infrared quasielastic and inelastic electronic light scattering spectroscopy in p-GaAs and p-InP
    4th Internatinal Conference on the Physics of semiconductors, 2.-7.8.1998,
    Jerusalem, Israel (Abstract-Band)
  • B. H. Bairamov, I. K. Polushina, Yu. V. Rud’, V. Yu. Rud’, G. Irmer, J. Monecke, P. G. Schunemann, N. Fernelius, M. C. Ohmer
    Direct evidence for anisotropy of optical and electron transport properties of atomic ordering in CdGeAs2
    24th International Conference on the Physics of Semiconductors, 2.-7. 8.1998,
    Jerusalem, Israel (Abstract-Band)
  • O. Pätzold, G. Irmer, K. Sonnenberg, J. Monecke
    Incorporation of Boron into doped GaAs
    24th International Conference on the Physics of Semiconductors, 2.-7. 8.1998,
    Jerusalem, Israel (Abstract-Band)
  • P. Verma, G. Irmer, J. Monecke
    Laser power dependence of confinement energy in nanoparticles
    17th General Conference of the Condensed Matter Division, Grenoble, 25.-29.8. 1998, p. 135
  • D. Schneider, K. Fricke, M. Wenzel, G. Irmer, C. Rigo, H. C. Neitzert
    Effective electron mass and optical phonon modes in In0.53Ga0.47As from magnetephonon effect and Raman scattering at temperatures between T = 77 K and 400 K
    Physical Phenomena at High Magnetic Field-III, 24.-27.10.1998, Tallahassee, USA
  • D. Schneider, C. Brink, G. Irmer, P. Verma
    Effective mass and bandstructure of n-InAs from magnetephonon resonance
    13th International Conference on high magnetic fields in semiconductor
    physics, Nijmegen, The Netherlands, 10.-14. 8.
  • M. Dietrich, D. Degering, S. Unterricker, J. Kortus, M. Deicher, A. Burchard und ISOLDE-COLLABORATION
    Strukturelle Leerstellen in Halbleitern – PAC-Untersuchungen
    Frühjahrstagung des Arbeitskreises Festkörperphysik, Regensburg, 1998,
    Verhandlungen der Deutschen Physikalischen Gesellschaft, S. 715
  • W. Siegel, G. Kühnel, J. Monecke, C. Reichel, T. Richter, S. Schulte, G. Zychowitz
    Tiefe Störstellen und ihr Einfluss auf die elektrischen Eigenschaften von undotiertem GaAs
    BHT-Tagungsheft 1998, S. 21
  • J. Kortus, K. Roth, M. Herms, D. V. Porezag, and M. R. Pederson
    The composition of phosphorus & arsenic vapor in view of thermal processing of III-V wafers
    Proceedings 10th Intern. Conf. on Indium Phosphide and Related Materials,
    Tsukuba, Japan, 1998, S. 533
  • R. T. Pidgeon, L. Nasdala, W. Todt
    Determination of radiation damage ages on parts of zircon grains by Raman microprobe: implications for annealing history and U-Pb stability
    8th V. M. Goldschmidt Conference, Toulouse, Mineralogical Magazine, 62A (1998) S. 1174
  • I. M. Tiginyanu, G. Irmer, J. Monecke, H. L. Hartnagel, A. Vogt, J. J. Grob, C. Schwab
    Porosity-induced optical phonon engineering in III-V compounds
    Proc. Fall Meeting, 30. 11. – 4. 12. 1998, Boston, Massachusetts, S. 103