Publikationen 1997

  • G. Irmer, M. Wenzel, J. Monecke
    Light scattering by a multicomponent plasma coupled with longitudinal-optical phonons: Raman spectra of p-type GaAs:Zn
    Phys. Rev. B56 (1997) 9524
  • M. Wenzel, G. Irmer, J. Monecke and, W. Siegel
    Hole mobilities and the effective Hall factor in p-type GaAs
    J. Appl. Phys. 81 (1997) 7810
  • G. Irmer, J. Monecke, M. Wenzel
    The dielectric function in p-type III-V semiconductors
    J. Physics: Condens. Matter 9 (1997) 5371
  • J. Kortus, J., Monecke
    Theory of incompletely isovalent delta-doped semiconductors
    J. Phys.: Condens. Matter 9 (1997) 5321
  • J. Monecke
    Exact properties of the self-energy of mixed crystals
    Phys. Rev. B55 (1997) 7515
  • W. Siegel, J. Monecke, S. Schulte and G. Kühnel
    Hall mobility lowering in undoped n-type bulk GaAs due to
    cellular-structure related nonuniformities
    J. Appl. Phys. 81 (1997) 3155
  • J. Miao, I. M. Tiginyanu, H. L. Hartnagel, G. Irmer, J. Monecke and B. L. Weiss
    The characteristics of high-resistance layers produced in n-GaAs using MeV-nitrogen implantation for three-dimensional structuring
    Appl. Phys. Letters 70 (1997) 847
  • I. M. Tiginyanu, G. Irmer, J. Monecke, H. L. Hartnagel
    Micro-Raman-scattering study of surface-related phonon modes in porous GaP
    Phys. Rev. B 55 (1997) 6739
  • I. M. Tiginyanu, G. Irmer, J. Monecke, A. Vogt, H. L. Hartnagel
    Porosity-induced modification of the phonon spectrum of n-GaAs
    Semicond. Sci. Technol. 12 (1997) 491
  • B. H. Bairamov, G. Irmer, J. Monecke, V. K. Negoduyko, V. V. Toporov, V. A. Voitenko, B. P. Zakharchenya
    Nonequilibrium fluctuations of light and heavy hole gas and observation of acoustic plasma oscillations associated with inter-valence-band photoeffect in p-GaAs
    phys. stat. sol. (b) 204 (1997) 456
  • W. Siegel, S. Schulte, C. Reichel, J. Monecke, G. Kühnel
    Anomalous temperature dependence of the Hall mobility in undoped bulk GaAs
    J. Appl. Phys. 82 (1997) 3832
  • M. Wenzel, G. Irmer, J. Monecke
    Electronic Raman spectra of shallow acceptors in p-type InP
    Solid State Comm. 104 (1997) 371
  • O. Pätzold, K. Sonnenberg, G. Irmer
    Defect Processes Causing Free Carrier Variations around Dislocations in n-type doped GaAs
    Mat. Sci. Eng. B44 (1997) 217
  • H-P. Martin, E. Müller, G. Irmer, F. Babonneau
    Crystallisation behaviour and polytype transformation of polymer-derived silicon carbide
    Journ. Europ. Ceramic Society 17 (1997) 59
  • L. Nasdala
    Reticulit - das leichteste Gestein?
    MineralienWelt 8 (1997) 47
  • L. Zhu, K. Seff, T. Witzke, L. Nasdala
    Crystal Structure of Zn4Na(OH)6SO4Cl · 6H2O
    J. Chem. Cryst. 27 (1997) 325
  • J. Götze, D. Habermann, U. Kempe, L. Nasdala, R. D. Neuser, D. K. Richter
    High resolution cathodoluminescence combined with U-Pb geochronology (SHRIMP) of detrital zircons: A case study of the Cretaceous Weferlingen quartz sand (Germany)
    GAEA Heidelbergensis, 3 (1997) 145
  • L. Nasdala, A. Massanek, B. Ullrich, T. Witzke
    Mineralvorkommen in der Nordsächsischen Grauwacke bei Oßling/Lausitz
    Der Aufschluss 48 (1997) 81
  • L. Nasdala, A. Beran, D. Wolf
    Incorporation of hydroxyl groups and molecular water in zircons
    Ber. Deutsch. Geol. Ges., Beiheft  z. Eur. J. Mineral. 9 (1997) 266
  • S. Anand, P. Verma, K. P. Jain
    Resonant Raman scattering at E0 gap in ZnSe:Li
    Proc. Of National Laser Symposium, Indore, India, 1997
  • J. Kortus and J. Monecke
    Electronic Structure of Incompletely Isovalent delta-doped Layers in Semiconductors
    8th International Workshop on Computational Condensed Matter Physics: Total Energy and Force Methods
    Trieste, 1997, Italy, p. 75
  • B. H. Bairamov, V. A. Voitenko, V. K. Negoduyko, V. V. Toporov, B. P. Zakharchenya, G. Irmer, J. Monecke
    Experimental observation of acoustic plasma oscillations in p-GaAs associated with intervalence-band photoeffect
    Proc. Of the 23rd Intern. Symposium on Compound Semiconductors,
    Inst. Phys. Conf. Ser. No 155, IOP Publ. Ltd., Bristol, 1997, p. 791
  • G. Irmer, P. Verma, W. Cordts, J. Monecke
    Niederfrequente Ramanstreuung an Nanokristalliten in Glas
    Tagungsband Ramanspektroskopie, Erfurt, 1997, S. 62
  • M. Wenzel, P. Gippner, K.-D. Schilling, W. Seidel, E. Grosse, G. Irmer, F. Wirbeleit, H. Wirth
    Free Electron Laser Annealing of Ion Implanted SiC
    Jahresbericht 1997, Forschungszentrum Rossendorf
  • W. Cordts, G. Irmer, J. Monecke
    Size determination of semiconductor nanocrystals by Raman spectroscopy
    Frühjahrstagung Halbleiterphysik, Münster 1997, Verhandlungen der
    Deutschen Physikalischen Gesellschaft 5/97, S. 698
  • I. M. Tiginyanu, G. Irmer, J. Monecke, H. L. Hartnagel
    MicroRaman Scattering Study of Surface-Related Phonon Modes in Porous GaP
    Frühjahrstagung Halbleiterphysik, Münster 1997, Verhandlungen der
    Deutschen Physikalischen Gesellschaft 5/97, S. 698
  • M. Wenzel, G. Irmer, J. Monecke
    Elektronische Ramanstreuung an p-InP
    Frühjahrstagung Halbleiterphysik, Münster 1997, Verhandlungen der
    Deutschen Physikalischen Gesellschaft 5/97, S. 698
  • O. Pätzold, G. Irmer, K. Sonnenberg
    Charakterisierung von Versetzungen in dotiertem, n-leitenden GaAs mittels Photoätzen, µRaman- und µPhotolumineszenz-Spektroskopie
    Frühjahrstagung Halbleiterphysik, Münster 1997, Verhandlungen der Deutschen Physikalischen Gesellschaft 5/97, S. 775
  • M. Dietrich, J. Kortus, W. Cordts, S. Unterricker
    Elektrische Feldgradienten in nichtkubischen Halbleitern - Allelektronenrechnungen
    Frühjahrstagung Halbleiterphysik, Münster 1997, Verhandlungen der
    Deutschen Physikalischen Gesellschaft 5/97, S. 713
  • O. Pätzold, G. Irmer, K. Sonnenberg
    Characterization of denuded zones around dislocations in doped GaAs by phase contrast microscopy and photoluminescence
    Inst. Phys. Conf. Ser. No 160, Proc. of the VIIth Intern. Conf. on Defect Recognition and Image Processing, Templin 1997, S. 119