G. Irmer, M. Wenzel, J. Monecke Light scattering by a multicomponent plasma coupled with longitudinal-optical phonons: Raman spectra of p-type GaAs:Zn Phys. Rev. B56 (1997) 9524
M. Wenzel, G. Irmer, J. Monecke and, W. Siegel Hole mobilities and the effective Hall factor in p-type GaAs J. Appl. Phys. 81 (1997) 7810
G. Irmer, J. Monecke, M. Wenzel The dielectric function in p-type III-V semiconductors J. Physics: Condens. Matter 9 (1997) 5371
J. Kortus, J., Monecke Theory of incompletely isovalent delta-doped semiconductors J. Phys.: Condens. Matter 9 (1997) 5321
J. Monecke Exact properties of the self-energy of mixed crystals Phys. Rev. B55 (1997) 7515
W. Siegel, J. Monecke, S. Schulte and G. Kühnel Hall mobility lowering in undoped n-type bulk GaAs due to cellular-structure related nonuniformities J. Appl. Phys. 81 (1997) 3155
J. Miao, I. M. Tiginyanu, H. L. Hartnagel, G. Irmer, J. Monecke and B. L. Weiss The characteristics of high-resistance layers produced in n-GaAs using MeV-nitrogen implantation for three-dimensional structuring Appl. Phys. Letters 70 (1997) 847
I. M. Tiginyanu, G. Irmer, J. Monecke, H. L. Hartnagel Micro-Raman-scattering study of surface-related phonon modes in porous GaP Phys. Rev. B 55 (1997) 6739
I. M. Tiginyanu, G. Irmer, J. Monecke, A. Vogt, H. L. Hartnagel Porosity-induced modification of the phonon spectrum of n-GaAs Semicond. Sci. Technol. 12 (1997) 491
B. H. Bairamov, G. Irmer, J. Monecke, V. K. Negoduyko, V. V. Toporov, V. A. Voitenko, B. P. Zakharchenya Nonequilibrium fluctuations of light and heavy hole gas and observation of acoustic plasma oscillations associated with inter-valence-band photoeffect in p-GaAs phys. stat. sol. (b) 204 (1997) 456
W. Siegel, S. Schulte, C. Reichel, J. Monecke, G. Kühnel Anomalous temperature dependence of the Hall mobility in undoped bulk GaAs J. Appl. Phys. 82 (1997) 3832
M. Wenzel, G. Irmer, J. Monecke Electronic Raman spectra of shallow acceptors in p-type InP Solid State Comm. 104 (1997) 371
O. Pätzold, K. Sonnenberg, G. Irmer Defect Processes Causing Free Carrier Variations around Dislocations in n-type doped GaAs Mat. Sci. Eng. B44 (1997) 217
H-P. Martin, E. Müller, G. Irmer, F. Babonneau Crystallisation behaviour and polytype transformation of polymer-derived silicon carbide Journ. Europ. Ceramic Society 17 (1997) 59
L. Nasdala Reticulit - das leichteste Gestein? MineralienWelt 8 (1997) 47
L. Zhu, K. Seff, T. Witzke, L. Nasdala Crystal Structure of Zn4Na(OH)6SO4Cl · 6H2O J. Chem. Cryst. 27 (1997) 325
J. Götze, D. Habermann, U. Kempe, L. Nasdala, R. D. Neuser, D. K. Richter High resolution cathodoluminescence combined with U-Pb geochronology (SHRIMP) of detrital zircons: A case study of the Cretaceous Weferlingen quartz sand (Germany) GAEA Heidelbergensis, 3 (1997) 145
L. Nasdala, A. Massanek, B. Ullrich, T. Witzke Mineralvorkommen in der Nordsächsischen Grauwacke bei Oßling/Lausitz Der Aufschluss 48 (1997) 81
L. Nasdala, A. Beran, D. Wolf Incorporation of hydroxyl groups and molecular water in zircons Ber. Deutsch. Geol. Ges., Beiheft z. Eur. J. Mineral. 9 (1997) 266
S. Anand, P. Verma, K. P. Jain Resonant Raman scattering at E0 gap in ZnSe:Li Proc. Of National Laser Symposium, Indore, India, 1997
J. Kortus and J. Monecke Electronic Structure of Incompletely Isovalent delta-doped Layers in Semiconductors 8th International Workshop on Computational Condensed Matter Physics: Total Energy and Force Methods Trieste, 1997, Italy, p. 75
B. H. Bairamov, V. A. Voitenko, V. K. Negoduyko, V. V. Toporov, B. P. Zakharchenya, G. Irmer, J. Monecke Experimental observation of acoustic plasma oscillations in p-GaAs associated with intervalence-band photoeffect Proc. Of the 23rd Intern. Symposium on Compound Semiconductors, Inst. Phys. Conf. Ser. No 155, IOP Publ. Ltd., Bristol, 1997, p. 791
G. Irmer, P. Verma, W. Cordts, J. Monecke Niederfrequente Ramanstreuung an Nanokristalliten in Glas Tagungsband Ramanspektroskopie, Erfurt, 1997, S. 62
M. Wenzel, P. Gippner, K.-D. Schilling, W. Seidel, E. Grosse, G. Irmer, F. Wirbeleit, H. Wirth Free Electron Laser Annealing of Ion Implanted SiC Jahresbericht 1997, Forschungszentrum Rossendorf
W. Cordts, G. Irmer, J. Monecke Size determination of semiconductor nanocrystals by Raman spectroscopy Frühjahrstagung Halbleiterphysik, Münster 1997, Verhandlungen der Deutschen Physikalischen Gesellschaft 5/97, S. 698
I. M. Tiginyanu, G. Irmer, J. Monecke, H. L. Hartnagel MicroRaman Scattering Study of Surface-Related Phonon Modes in Porous GaP Frühjahrstagung Halbleiterphysik, Münster 1997, Verhandlungen der Deutschen Physikalischen Gesellschaft 5/97, S. 698
M. Wenzel, G. Irmer, J. Monecke Elektronische Ramanstreuung an p-InP Frühjahrstagung Halbleiterphysik, Münster 1997, Verhandlungen der Deutschen Physikalischen Gesellschaft 5/97, S. 698
O. Pätzold, G. Irmer, K. Sonnenberg Charakterisierung von Versetzungen in dotiertem, n-leitenden GaAs mittels Photoätzen, µRaman- und µPhotolumineszenz-Spektroskopie Frühjahrstagung Halbleiterphysik, Münster 1997, Verhandlungen der Deutschen Physikalischen Gesellschaft 5/97, S. 775
M. Dietrich, J. Kortus, W. Cordts, S. Unterricker Elektrische Feldgradienten in nichtkubischen Halbleitern - Allelektronenrechnungen Frühjahrstagung Halbleiterphysik, Münster 1997, Verhandlungen der Deutschen Physikalischen Gesellschaft 5/97, S. 713
O. Pätzold, G. Irmer, K. Sonnenberg Characterization of denuded zones around dislocations in doped GaAs by phase contrast microscopy and photoluminescence Inst. Phys. Conf. Ser. No 160, Proc. of the VIIth Intern. Conf. on Defect Recognition and Image Processing, Templin 1997, S. 119