In our optical characterization laboratory both bulk semiconductors with large bandgap (e.g. gallium nitride GaN) and semiconductor nanocrystals/nanoclusters (e.g. composed of silicon Si or germanium Ge) are investigated using photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopy.
Excitation sources cover the whole range from ultraviolet (starting with 325 nm) to infrared (geoing beyond 2000 nm) wavelengths. Our “specialty” is a supercontinuums white light laser source, providing continuously tunable laser light from below 500 nm to above 2000 nm.
On the detection side we cover an almost as large wavelength range (300 to >1700 nm) using several high-sensitivity detectors. Particularly in combination with electrical characterization methods (such as IV, CV, DLOS) defects in bulk semiconductors and at their interfaces can be studied comprehensively.
A closed-cycle Helium cryostat provides temperatures down to approximately 15 K for low-temperature measurements.
- NKT Photonics SuperK Extreme EXR-15 supercontinuum white light laser (< 500-2400 nm)
- NKT Photonics SuperK Varia variable bandpass filter (450-850 nm)
- NKT Photonics SuperK Select variable multi-channel AOTF (600-2000 nm)
- Plasma JSC HeCd laser (325 nm)
- LTB MNL 106-LD nitrogen laser, pulsed (337 nm)
- Leybold RDK 10-320 closed-cycle Helium cryostat (15 K to room temperature)
- Acton SP2560 Triple-Grating Monochromator with Priceton Instruments
- Princeton Instruments SPEC-10:100BR_eXcelon CCD camera (liquid nitrogen cooled)
- North Coast / ADC Ge-Detector (liquid nitrogen cooled)
- Hamamatsu R3896 Photomultiplier Tube
Gellert-Bau | Leipziger Straße 23, Room 19
jan [dot] beyerphysik [dot] tu-freiberg [dot] de